Touch switches and practical applications therefor

ABSTRACT

A touch switch apparatus for detecting the presence of an object such as a human appendage, the apparatus having a touch pad, an electric field generated about the touch pad and also having a preferably integrated and local control circuit connected to the touch pad and to a controlled device. Practical applications for touch switch apparatus, including use of touch switch apparatus in connection with other structure to emulate mechanical switches.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. Provisional PatentApplication Ser. No. 60/613,073, filed on Sep. 24, 2004, and is acontinuation-in-part of U.S. patent application Ser. No. 10/272,377,filed on Oct. 15, 2002, which claims priority from U.S. ProvisionalPatent Application Ser. No. 60/334,040, filed on Nov. 20, 2001; U.S.Provisional Patent Application Ser. Nos. 60/341,350, 60/341,550, and60/341,551, all filed on Dec. 18, 2001; and U.S. Provisional PatentApplication Ser. No. 60/388,245, filed on Jun. 13, 2002; and is aContinuation-in-Part of currently-pending U.S. patent application Ser.No. 10/027,884, filed on Oct. 25, 2001, now U.S. Pat. No. 6,713,897,which is a continuation of U.S. patent application Ser. No. 09/234,150,filed on Jan. 19, 1999, now U.S. Pat. No. 6,320,282. The disclosures ofthese references are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to touch switches (i.e., switches that areoperated, for example, by touching a finger to or about a touch pad;also referred to herein as touch sensors or field effect sensors) andrelated control circuits and practical applications therefor.

BACKGROUND OF THE INVENTION

Mechanical switches have long been used to control apparatus of alltypes, including household appliances, machine tools, automobiles andrelated systems, and all sorts of other domestic and industrialequipment. Mechanical switches are typically mounted on a substrate andrequire some type of penetration through the substrate. Thesepenetrations, as well as penetrations in the switch itself, can allowdirt, water and other contaminants to pass through the substrate orbecome trapped within the switch, thus leading to electrical shorts andother malfunctions.

Touch switches are often used to replace conventional mechanicalswitches. Unlike mechanical switches, touch switches contain no movingparts to break or wear out. Moreover, touch switches can be mounted orformed on a continuous substrate sheet, i.e. a switch panel, without theneed for openings in the substrate. The use of touch switches in placeof mechanical switches can therefore be advantageous, particularly inenvironments where contaminants are likely to be present. Touch switchpanels are also easier to clean than typical mechanical switch panelsbecause they can be made without openings in the substrate that wouldallow penetration of contaminants.

Known touch switches typically comprise a touch pad having one or moreelectrodes. The touch pads communicate with control or interfacecircuits which are often complicated and remote from the touch pads. Asignal is usually provided to one or more of the electrodes comprisingthe touch pad, creating an electric field about the affected electrodes.The control/interface circuits detect disturbances to the electricfields and cause a response to be generated for use by a controlleddevice.

Although touch switches solve many problems associated with mechanicalswitches, known touch switch designs are not perfect. For example, manyknown touch switches can malfunction when contaminants such as water orother liquids are present on the substrate. The contaminant can act as aconductor for the electric fields created about the touch pads, causingunintended switch actuations. This presents a problem in areas wheresuch contaminants are commonly found, such as a kitchen and some factoryenvironments.

Existing touch switch designs can also suffer from problems associatedwith crosstalk, i.e., interference between the electric fields aboutadjacent touch pads. Crosstalk can cause the wrong touch switch to beactuated or can cause two switches to be actuated simultaneously by atouch proximate a single touch pad.

Many known touch switch designs are also susceptible to unintendedactuations due to electrical noise or other interferences affecting atouch pad itself, or the leads extending from the touch pad to itsassociated control circuit. This problem can be aggravated inapplications where the touch pad is a relatively large distance awayfrom the control circuitry, as is frequently the case with conventionaltouch switch designs.

Existing touch switch designs commonly require complicated controlcircuits in order to interface with the devices they control. Thesecontrol circuits are likely to be comprised of a large number ofdiscrete components which occupy considerable space on a circuit board.Because of their physical size, the control circuits are typicallylocated at a substantial distance from the touch pads themselves. Thephysical size of the control/interface circuits and their remotenessfrom the touch pads can aggravate many of the problems discussed above,such as crosstalk and susceptibility to electrical noise andinterference. The size and remoteness also complicate the overall touchswitch panel design, resulting in increased production cost andcomplexity.

Some known touch switch designs require a separate grounding lead fromthe touch pad to the interface/control circuit or to the controlleddevice. Certain apparatus utilizing conventional mechanical switches donot require, and may not readily accommodate, such grounding leads.Adapting such apparatus for use with such touch switches can require theaddition of special grounding provisions, thus increasing design andproduction time, complexity, and cost. These ground lead requirementscan preclude simple, direct replacement of conventional mechanicalswitch panels with touch switch panels.

Recent improvements in touch switch design include techniques whichlower the input and output impedance of the touch switch itself, therebymaking it highly immune to false actuations due to contaminants andexternal noise sources. U.S. Pat. No. 5,594,222 describes a lowimpedance touch switch design which is less susceptible to malfunctionin the presence of contaminants and electrical noise than many previousdesigns. Even though this approach has several advantages over the priorart, there are some attributes that may limit its application. Forinstance, the resulting touch switch may be sensitive to temperaturevariations. As long as the temperature variations at the output aresmall relative to legitimate signal changes and are small relative tosignal variations induced by transistor variations, then a singletransistor or other amplifying device will be quite satisfactory.However, this technique may require the use of additional circuitry tointerface with the controlled device, thus increasing cost andcomplexity to the overall touch switch design. In applications wherethere is little dynamic range to allow for compensation, and wheretemperature changes are significant relative to legitimate signalchanges, a different approach may be better able to eliminate or reducethe effects of temperature.

Also, even though the low impedance approach of this technique candifferentiate between contaminants with some finite amount of impedanceand a human touch with some finite amount of impedance, this techniquemay not be enough to differentiate between extremely low levels ofimpedance. Such a situation could exist when an entire touch switch(i.e., both the inner and outer electrode) is covered with a largeamount of contaminant. A similar, essentially zero-impedance, situationcould exist when a conductive material, such as a metal pan, entirelycovers a touch switch.

U.S. Pat. No. 6,310,611, assigned to the same assignee as the presentapplication, and hereby incorporated by reference herein, discloses atouch switch apparatus having a differential measuring circuit whichaddresses many of the problems related to common mode disturbancesaffecting touch switches. For example, a touch switch having atwo-electrode touch pad can be configured to generate an electric fieldabout each electrode. A common mode disturbance, such as a contaminantsubstantially covering both electrodes, is likely to affect the electricfield about each of the electrodes substantially equally. Each electrodeprovides a signal proportional to the disturbance to the differentialmeasuring circuit. Since the signals from the electrodes are thereforecontemplated to be substantially equal, the differential measuringcircuit does not sense a differential and does not respond to the commonmode disturbance. On the other hand, if the field about only one of theelectrodes is disturbed, the signal provided by that electrode to thedifferential measuring circuit will likely be substantially differentthan that provided by the other, non-affected electrode. Thedifferential circuit can respond by providing an output based on thedifferent degrees of stimulation at the first and second electrodes,which can cause a switch actuation based upon the particular stimulationstate of the electrodes or can provide information based on manystimulation states at the electrodes.

Although the differential measuring circuit approach addresses manyproblems known in the prior art, it is relatively complex and can becostly to design and manufacture. A differential measuring circuittypically comprises many more parts than a more conventional controlcircuit. The additional parts are likely to take up more space on atouch switch panel. As such, the control circuit is likely to be evenfarther from the touch pad than it might be with a non-differentialcircuit design, requiring long leads between the touch pad and itscontrol circuit. This can actually aggravate concerns related toelectrical interference. Furthermore, when building a differentialmeasuring circuit, matching of components becomes important. Propercomponent matching presents an additional manufacturing burden and islikely to add cost. Also, when using differential sensing techniques,the resulting signals are relatively small compared to the dynamic rangeof absolute signal changes of the electrodes, especially in lowimpedance applications. The resulting signal therefore can be affectedby noise and other environmental effects. Proper buffering of thedifferential signal would typically require the use of additionalcomponents to construct a switch or a buffer. Further, when a stimulussuch as a pulse signal is applied from a remote control circuit, thepulse signal may be affected. Stimulus generating circuits such as pulsegenerating circuits typically require many components and occupyphysical space that could interfere with the sensing electrodes.Therefore, the signal generating circuits need to be physically locatedremote from the sensing electrodes if they occupy physical space thatcan inadvertently affect or bias the sensing electrodes, which wouldeffectively reduce the signal to noise ratio performance of the sensor.

Although the foregoing improvements can reduce unintended switchactuations as a result of crosstalk between switches and the effects ofelectrical interference on their control circuits, they do not eliminatethese problems completely. Also, they do not address the need forseparate grounding circuits in certain touch switch applications orresolve the concerns related thereto. Furthermore, it would beadvantageous if the aforementioned features could be implemented usingas small a physical structural form as possible.

Typically, actuation of a field effect sensor requires neitherapplication of force nor physical displacement of a structural member bya user, as would be the case with, for example, a mechanical pushbutton, toggle, or rotary switch. While this is a desirable attribute inmany applications, in other applications it can be desirable for a userto apply force to or physically displace a switch member in order togive the user the physical perception that the switch has changed state.In certain application, it would be desirable to provide a switchingmechanism having the advantages offered by field effect sensors, whileretaining the mechanical feel of a conventional mechanical switch.

SUMMARY OF INVENTION

The present invention provides a touch switch apparatus comprising atouch pad and a control circuit located near the touch pad. The touchpad and control circuit may be mounted on a dielectric substrate. Thecontrol circuit is small compared to the overall size of the apparatus.In a preferred embodiment, the control circuit is substantially reducedto one or more integrated circuits. The physical compactness of thecontrol circuit in the integrated circuit embodiment reduces the touchswitch's susceptibility to common mode interference and to crosstalk andinterference between adjacent touch switches. The integrated circuitapproach also provides for better matching and balancing of the controlcircuit components.

The touch switch of the present invention can be configured in a varietyof preferred embodiments. In some embodiments, the touch switch canemulate a conventional, maintained-contact type of mechanical switch. Inother embodiments, the touch switch can emulate a momentary-contact typeof mechanical switch. Also, in other embodiments the touch switch canprovide multiple outputs relative to the sensing at the sensingelectrodes.

In a preferred embodiment, the touch pad has a first electrode and asecond electrode proximate the first electrode. At least one of theelectrodes is electrically coupled to the local control circuit. Thefirst and second electrodes and the local control circuit are typicallyplaced on the same surface of a substrate, opposite the side of thesubstrate to be used as the touch surface. However, they need not becoplanar, and may be placed on opposite sides of a substrate.

In an alternate embodiment, the touch pad has a single electrode whichis electrically coupled to the local control circuit. In other alternateembodiments, the touch pad can have more than two electrodes.

In a preferred embodiment, the control circuit includes means forgenerating a signal and providing it to the touch pad to create anelectric field about one or more of the electrodes comprising the touchpad. Alternatively, such a signal may be generated elsewhere andprovided to one or more of the electrodes to create one or more electricfields thereabout. The control circuit detects disturbances to theelectric fields in response to stimuli thereto, such as a user'sfingertip contacting or approaching the substrate adjacent the touchswitch. The control circuit selectively responds to such fielddisturbances by generating a control signal for use by a controlleddevice, such as a household appliance or an industrial machine.

In a preferred embodiment, the control circuit detects and responds todifferences in electrical potential between the first and secondelectrodes in response to the introduction of a stimulus in proximity toeither the first electrode, the second electrode, or both. Suchdifferential measuring circuit provides for the rejection of common modesignals (i.e., signals that would tend to affect both electrodesapproximately equally) such as temperature, electrical noise, powersupply variations, and other inputs. The differential measuring circuitalso provides for the rejection of common mode signals resulting fromthe application of contaminants to the substrate adjacent the touchswitch.

In a preferred embodiment, a signal is applied to a first electrode andto a second electrode. The signal may be generated from within thecontrol circuit or from elsewhere. An electric potential is developed ateach electrode, and, consequently, an electric field is generated abouteach of the electrodes. Two matched transistors are arranged in adifferential measuring circuit, with the first transistor connected tothe first electrode and the second transistor connected to the secondelectrode. Each transistor's output is connected to a peak detectorcircuit, and the output of each peak detector circuit is in turnprovided to a decision circuit.

Each transistor's output is altered when the electric field about itscorresponding electrode is altered, such as when the electrode istouched or approached by a user. The peak detector circuits respond tochanges in the transistors' outputs and provide signals corresponding tothe peak potentials from the transistors to the decision circuit. Thedecision circuit uses the peak potentials in a predetermined manner toprovide an output for use by other portions of the control circuit.

In a preferred embodiment, the inner and outer electrodes are operablyassociated with the inputs to the decision circuit such that when adisturbance to an electric field about a first electrode is greater thanthe degree of disturbance of an electric field about a second electrode,the decision circuit will provide a high level output. Conversely, thedecision circuit will provide a low level output when a disturbance tothe electric field about the second electrode is greater than the degreeof disturbance of an electric field about the first electrode. When thefields about both electrodes are disturbed more or less equally, thedecision circuit will provide a low level output.

The first condition can be created, for example, when a fingertipsubstantially covers the first electrode but not the second electrode.The second condition can be created, for example, when a fingertip orcontaminant substantially covers the second electrode but not the firstelectrode. The third condition can be created, for example, when acontaminant or an object, such as a metal pan, covers both the first andsecond electrodes.

The decision circuit output is provided to other circuit components,such as an electrical latch, which selectively cause a control signal tobe output from the control circuit, depending on the decision circuitoutput state. In a preferred embodiment, a high level output from thedecision circuit ultimately causes a control signal to be output fromthe control circuit, while no control signal will be output in responseto a low level output. In an alternate embodiment, a low level outputfrom the decision circuit causes a control signal to be output from thecontrol circuit, while no control signal will be output in response to ahigh level output.

The touch switch apparatus of the present invention can be used toperform almost any function which can be performed by a mechanicalswitch, such as turning a device on or off, adjusting temperature, orsetting a clock or timer. It can be used in place of, and solve problemsassociated with, existing touch switches. It can also be used as adirect replacement for mechanical membrane-type switches. The touchswitch apparatus of the present invention is well suited for use inenvironments where temperature variations are extreme, where substantialamounts of contaminants can be present or where metal objects may beplaced on or over the touch pad.

The present invention provides input circuit portions for moreeffectively communicating signals between touch pad electrodes and logicand decision circuits. In a preferred embodiment, these input portionsof the control circuit include active devices and peak detectioncircuits in various configurations to convert high frequency transientpulses to DC signals. These embodiments can eliminate the need for morecomplicated AC processing circuitry and can allow for the use of DCprocessing circuitry which will reduce the size and cost of theintegrated circuits of the touch switch assemblies. Also, thesepreferred embodiments can be capable of discharging the electric fieldsassociated with the peak detection circuits, which correspond to theelectric fields at the input electrodes.

In other preferred embodiments, the negative effects of straycapacitance caused by bonding pad and wire bonding configuration arecompensated for by incorporating swamping capacitance in the inputportions of the control circuits mentioned above. Swamping according tothese embodiments of the present invention can eliminate imbalances inthe differential measuring circuit caused by the stray capacitance andcan thereby provide for more consistent electrical information goinginto the decision circuit.

In other preferred embodiments, protection of the control circuitry fromdamage caused by stray current and the sometimes high electrostaticpotential of the input electrodes of the touch pad is provided by activeblocking device configurations in the input portions of the controlcircuit.

Other preferred embodiments can provide for statistical filtering andsampling in high noise and other environments. Also, other preferredembodiments provide for the linearization of input signals sent todecision circuits using differential measuring techniques.

The present invention also provides dual connection latch circuits,which facilitate the direct replacement of membrane and other mechanicalswitches with touch sensing switches. In preferred embodiments, thislatch circuit configuration can provide isolation from inherent leakagecurrent paths that develop from the doped substrates used to fabricatethe control and integrated circuits of touch switch assemblies. It isalso an object of the present invention to provide for an analog outputthat exploits the advantages of the input configurations of the circuitsutilized by the invention. It is a further object of the invention toprovide ways to sense capacitive inputs.

The present invention also is directed to practical applications fortouch switches. While the touch switches described herein areparticularly well-suited for use in connection with many of theapplications discussed herein, other touch switches and sensors, forexample, capacitive sensors and field effect sensors as disclosed inU.S. Pat. Nos. 5,594,222 and 6,310,611, the disclosures of which areincorporated herein by reference, may be used in such applications aswell.

BRIEF DESCRIPTION OF THE DRAWINGS

The various features, advantages and other uses of the present inventionwill become more apparent by referring to the following detaileddescription and drawings in which:

FIG. 1 is a perspective drawing of the components of a preferredembodiment of a touch switch of the present invention;

FIG. 2 is a cross-sectional view of a two-electrode touch pad andintegrated circuit chip of the present invention;

FIG. 3 is a plan view of an embodiment of a touch switch apparatus ofthe present invention;

FIG. 4 is an electrical schematic representation of a touch switchcontrol circuit configured for a preferred operating mode;

FIG. 5 is an electrical schematic representation of a touch switchcontrol circuit configured for an alternate preferred operating mode;

FIG. 6 is an electrical schematic representation of a touch switchcontrol circuit configured for another alternate preferred operatingmode;

FIG. 7 is an electrical schematic representation of a touch switchcontrol circuit configured for yet another alternate preferred operatingmode;

FIG. 8 is a cross-sectional view of an alternate embodiment of a touchpad of the present invention;

FIG. 9 is a cross-sectional view of another alternate embodiment of atouch pad of the present invention;

FIG. 10 is a diagrammatic representation of an embodiment of a touchswitch panel using a plurality of touch switches in matrixed form;

FIGS. 11A-11D are electrical schematic representations of inputcircuitry for touch switch control circuits that are compatible with thecircuits depicted in FIGS. 4-7;

FIGS. 12A-12H are the electrical schematic representations of inputcircuitry for the touch switch control circuits of FIGS. 11A-11D whereactive devices serve as current sources;

FIGS. 13A-13H are the electrical schematic representations of inputcircuitry for the touch switch control circuits of FIGS. 12A-12H withdifferent combinations of active devices;

FIGS. 14A-14D are the electrical schematic representations of inputcircuitry for the touch switch control circuits of FIGS. 11A-11D havingactive square root extraction devices;

FIGS. 15A-15D are the electrical schematic representations of inputcircuitry for the touch switch control circuits of FIGS. 14A-14D havingdifferent active square root extraction devices;

FIG. 16 is an electrical schematic representation of input circuitry forthe touch switch control circuit of FIG. 15A having swamping capacitanceprovided by capacitors;

FIG. 17A is an electrical schematic representation of input circuitryfor the touch switch control circuit of FIG. 16 where swampingcapacitance is provided by the depletion capacitance of diodes at theinputs;

FIG. 17B is a diagram of a touch switch assembly showing one possibleconfiguration wherein the electrodes are proximate the integratedcircuit;

FIG. 18A shows a configuration that provides for negative feedbackdirectly in the input circuit;

FIG. 18B shows a common gate configuration with front end swampingcapacitance and illustrates how the input configuration can be differentfrom a common source configuration as shown all of the previousdrawings;

FIG. 18C shows the configuration of FIG. 18B but with depletion diodes;

FIG. 18D shows the configuration of FIG. 18B but in single electrodeformat and utilizing two swamping capacitors and illustrates costeffective integrated circuit matching;

FIG. 18E shows the configuration of FIG. 18D but with depletion diodes;

FIG. 19 is an electrical schematic representation of output circuitryfor the integrated circuit of a touch switch control circuit;

FIGS. 20A-20D are schematic representations of touch cell matrices foruse with various operating modes;

FIGS. 21A-21F are schematic representations of MOSFET blocking devices;

FIG. 22 is a schematic of one way to configure a matrix of membrane orother mechanical switches and the addressing and timing therefor;

FIG. 23 is the schematic of FIG. 22 wherein the switches are touchswitch assemblies having two connections to the address lines of thematrix configuration;

FIGS. 24A-24B are electrical schematic representations of certainfeatures of the output circuit depicted in FIG. 9 communicating with atouch switch control circuit;

FIG. 25A shows a possible configuration of the active devices that makeup a latch circuit according to the present invention;

FIGS. 25B-25C are schematic representations of a latch circuit accordingto the present invention;

FIGS. 26A-26C show a capacitive switch apparatus for use with theintegrated circuit of the present invention wherein the circuit depictedin FIG. 26D can respond to capacitance between two electrodes thatchanges owing to a change in the distance between therebetween;

FIG. 26D depicts a circuit according to the present invention for usewith the application described with reference to FIGS. 26A-26C;

FIGS. 27A-27D show a liquid sensing capacitive switch apparatus for usewith the integrated circuit of the present invention wherein the circuitdepicted in FIG. 27E can respond to a change in the relative dielectricconstant of an electrode;

FIG. 27E depicts a circuit according to the present invention for usewith the application described with reference to FIGS. 27A-27D;

FIGS. 28A-28B show a capacitive switch apparatus for use with theintegrated circuit of the present invention wherein the circuit of FIG.28C can respond to capacitance between two electrodes that changes owingto an effective change in the surface area of one electrode;

FIG. 28C depicts a circuit according to the present invention for usewith the application described with reference to FIGS. 28A-28B;

FIGS. 29A-29G show a capacitive switch apparatus that can function as adialing device for use with the integrated circuit of the presentinvention (FIGS. 29A-29D show the electrode configuration of theapparatus at various input stages; FIGS. 29E-29F show the pulse outputof two types of rotation of the device; and FIG. 29G shows a possibleintegrated circuit configuration for use with the device depicted inFIGS. 29A-29D);

FIGS. 30A-30E show another type of capacitive switch dial device for usewith the integrated circuit of the present invention wherein anelectrode is grounded by the user;

FIGS. 30F-30G show the pulse output of two types of rotation of thedevice;

FIG. 30H shows a schematic of the input connections between the deviceof FIGS. 30A-30E and an integrated circuit for use with that device;

FIGS. 31A-31F show the separate layers and construction of a touchswitch with integrated control circuit two-by-two matrix assembled ontoa substrate;

FIG. 32 shows an embodiment of the integrated circuit of the presentinvention using AC input and low current;

FIG. 33A shows the input and other portions of an embodiment of theintegrated circuit of the present invention for use with electric fieldsensing applications that has an analog output;

FIGS. 33B-33C show timing diagrams for the integrated circuit depictedin FIG. 33A;

FIG. 34 shows a matrix of analog output sensors;

FIG. 35A is a side elevation view of an embodiment of a push buttonswitch emulation according to the present invention;

FIG. 35B is a bottom plan view of an embodiment of a push button switchemulation according to the present invention;

FIG. 35C is a side elevation view of an alternate embodiment of a pushbutton switch emulation according to the present invention;

FIG. 35D is a side elevation view of another alternate embodiment of apush button switch emulation according to the present invention;

FIG. 35E is a bottom plan view of yet another alternate embodiment of apush button switch emulation according to the present invention;

FIG. 36A is a side elevation view of an embodiment of a toggle switchemulation according to the present invention;

FIG. 36B is a side elevation view of an embodiment of a toggle switchemulation according to the present invention;

FIG. 36C is a bottom plan view of an embodiment of a toggle switchemulation according to the present invention;

FIG. 36D is a side elevation view of an alternate embodiment of a toggleswitch emulation according to the present invention;

FIG. 37A is a side elevation view of a rotary switch emulation accordingto the present invention;

FIG. 37B is a bottom plan view of an embodiment of a portion of a rotaryswitch emulation according to the present invention;

FIG. 37C is a bottom plan view of another portion of an embodiment of arotary switch emulation according to the present invention;

FIG. 37D is a bottom plan view of another portion of an embodiment of arotary switch emulation according to the present invention;

FIG. 37E is a timing chart for an embodiment of a rotary switchemulation according to the present invention;

FIG. 37F is a side elevation view of an alternate embodiment of a rotaryswitch emulation according to the present invention;

FIG. 37G is a side elevation view of another alternate embodiment of arotary switch emulation according to the present invention;

FIG. 37H is a side elevation view of yet another alternate embodiment ofa rotary switch emulation according to the present invention;

FIG. 37I is a top plan view of a portion of still another alternateembodiment of a rotary switch emulation according to the presentinvention;

FIG. 38A is a side elevation view of a further alternate embodiment of arotary switch emulation according to the present invention;

FIG. 38B is a top plan view of a further alternate embodiment of arotary switch emulation according to the present invention;

FIG. 38C is a bottom plan view of a portion of a further alternateembodiment of a rotary switch emulation according to the presentinvention;

FIG. 38D is a partial cross-sectional view of a portion of a furtheralternate embodiment of a rotary switch emulation according to thepresent invention;

FIG. 39A is a side elevation view of an embodiment of a rotary switchemulation and/or angular position sensor according to the presentinvention and a schematic representation of electrode structure for usein connection therewith;

FIG. 39B is a schematic representation of an alternate electrodestructure for use in connection with the embodiment illustrated in FIG.39A;

FIG. 40 is a side elevation view of still another further alternateembodiment of a rotary switch emulation according to the presentinvention;

FIG. 41A is a side elevation view of an embodiment of a rocker switchemulation according to the present invention;

FIG. 41B is a side elevation view of an alternate embodiment of a rockerswitch emulation according to the present invention;

FIG. 41C is a side elevation view of another alternate embodiment of arocker switch emulation according to the present invention;

FIG. 42A is a side elevation view of an embodiment of a slide switchemulation according to the present invention;

FIG. 42B is a side elevation view of an alternate embodiment of a slideswitch emulation according to the present invention;

FIG. 42C is a side elevation view of another alternate embodiment of aslide switch emulation according to the present invention;

FIG. 42D is a perspective view of an alternate embodiment of a rotaryswitch emulation according to the present invention;

FIG. 42E is a top plan view of an x-y position sensor according to thepresent invention;

FIG. 43 is a side elevation view of an embodiment of a ball switchemulation according to the present invention;

FIG. 44 is an illustration of a throttle control and related sensorsembodying the principles of the present invention;

FIG. 45A is a perspective view of a tire pressure sensing apparatusaccording to the present invention;

FIG. 45B is a side elevation view of a tire pressure sensing apparatusaccording to the present invention;

FIG. 46 is a side elevation view of an automobile seat including weightand position sensors according to the present invention;

DETAILED DESCRIPTION OF THE DRAWINGS

The disclosures of U.S. Pat. Nos. 5,594,222, 5,856,646, 6,310,611,6,320,282, 6,713,897, and 6,897,390, and U.S. patent application Ser.No. 10/271,933 entitled Intelligent Shelving System, Ser. No.10/272,047, entitled Touch Sensor with Integrated Decoration, and Ser.No. 10/850,272, entitled Integrated Touch Sensor and Light Apparatus,all filed on Oct. 15, 2002 all assigned to the assignee of the presentinvention, are hereby incorporated herein by reference.

The invention pertains to a touch switch apparatus comprising a touchpad having one or more electrodes and a control circuit. Many of thedrawings illustrating the control circuit depict the circuit as large inrelation to the touch pad for clarity. In typical applications, however,the control circuit may be small compared to the touch pad, and ispreferably in the form of one or more integrated circuit chips.

FIG. 1 is a perspective representation of one preferred embodiment of atouch switch apparatus 20 of the present invention. Touch switchapparatus 20 comprises a touch pad 22, a control circuit 24 comprisingan integrated circuit (IC) chip 26 having eight output terminalsPIN1-PIN8, and first and second resistors R1 and R2. In the embodimentshown, touch pad 22 comprises a first electrode E1 and a secondelectrode E2, although the touch pad may also be comprised of more orfewer than two electrodes. Although control circuit 24 could befabricated using discrete electronic components, it is preferable toembody control circuit 24 in a single integrated circuit chip, such asIC chip 26.

Control circuit 24, via terminals PIN1-PIN8 of IC chip 26, iselectrically coupled to, and communicates with, first and secondresistors R1 and R2, first and second electrodes E1 and E2, and an inputline 30 which is configured to supply a control and/or power signal froma remote device (not shown). Control circuit 24 also communicates with aremote device (not shown) using a first output line 32. In someembodiments, a second output line 34 is also used for communication withthe remote device (not shown).

FIG. 2 is a partial cross-sectional view of a typical touch switch 20 ofthe present invention in which the components comprising touch switchapparatus 20 are mounted on a dielectric substrate 35 having a frontsurface 36 and an opposing rear surface 37. In the embodiment shown,first and second electrodes E1 and E2 are mounted on rear surface 37 ofsubstrate 35. IC chip 26 is also mounted on rear surface 37 of substrate35, proximate first and second electrodes E1 and E2. As can be seen fromboth FIGS. 1 and 2, in the preferred embodiment it is contemplated thatIC chip 26 comprising control circuit 24 be mounted in close proximityto touch pad 22.

Substrate 35 is typically comprised of a relatively rigid dielectricmaterial, such as glass, plastic, ceramic, or any other suitabledielectric material. However, substrate 35 may also comprise any othersuitable dielectric material, including flexible materials. ConsolidatedGraphics No. HS-500, Type 561, Level 2, a 0.005 inch thick polyestermaterial, is an example of a suitable flexible substrate. In embodimentswhere the touch switch apparatus components are mounted on a flexiblesubstrate, the flexible carrier is often subsequently applied toanother, generally more rigid, substrate.

In a preferred embodiment, substrate 35 is made of glass having auniform thickness of about 3 mm. In other embodiments, the thickness ofsubstrate 35 may vary, depending on the type of material used, itsmechanical and electrical properties, and the physical strength andelectrical sensitivity required for a particular application. Themaximum functional thickness for glass and plastic substrates is on theorder of several inches. However, in most practical applications, glasssubstrates range in thickness from about 1.1 mm to about 5 mm, whileplastic substrates can be even thinner.

In a preferred embodiment, as shown in FIGS. 1 and 2, second electrodeE2 substantially surrounds first electrode E1. A space 28 is locatedbetween first electrode E1 and second electrode E2. First electrode E1may be dimensioned such that it may be “covered” by a user's fingertipor other human appendage when the user touches the corresponding portionof front surface 36 of substrate 35. In one preferred embodiment, firstelectrode E1 is square and second electrode E2 is arranged in a squarepattern about and conforming to the shape of first electrode E1.

Although the touch pad geometry illustrated in FIGS. 1 and 2 representsa preferred arrangement of first and second electrodes E1 and E2, itshould be recognized that the electrode arrangement can be variedextensively to accommodate a wide variety of applications. For example,the electrode size, shape, and placement may be varied to accommodatethe size of the appendage or other stimulus contemplated to actuatetouch switch 20. For example, a particular application might requirethat a hand, rather than a finger, provide the stimulus to actuate touchswitch 20. In such an application, first and second electrodes E1 and E2would be much larger and spaced farther apart.

First electrode E1 may take any number of different geometric shapes,including, but not limited to, rectangles, trapezoids, circles,ellipses, triangles, hexagons, and octagons. Regardless of the shape offirst electrode E1, second electrode E2 can be configured to at leastpartially surround first electrode E1 in a spaced-apart relationship.However, it is not necessary for second electrode E1 to surround thefirst electrode even partially in order to obtain the benefits of theinvention. For example, first and second electrodes E1 and E2 can beadjacent to each other, as shown in FIG. 3. In alternative embodiments,second electrode E2 may be omitted.

Furthermore, the electrode configuration need not be co-planar, but canbe three dimensional to conform to a sphere, a cube, or other geometricshape. This design flexibility allows the invention to be used in a widevariety of applications, with substrates of varying shapes andcomposition. In some applications, it may not be necessary to actuallytouch substrate 35 upon or within which touch pad 22 and control circuit24 are situated. For example, FIG. 8 illustrates a touch switchapparatus 20 wherein first and second electrodes E1 and E2 are mountedon an exterior surface 113 of a first pane 11 1 of a thermopane window 110 and which can be actuated by a user bringing a suitable stimulus 1 15proximate an exterior surface 114 of an opposing pane 112 of the window.

As noted above, first and second electrodes E1 and E2 need not becoplanar; they can be mounted on different sides or surfaces of asubstrate, or on different substrates altogether. For example, FIG. 9illustrates a touch switch apparatus 20 wherein first electrode E1 ismounted on a first surface 36 of a substrate 35 and second electrode E2and IC chip 26 are mounted on a second, opposing surface 37 of substrate35. In applications where first and second electrodes E1 and E2 are onthe same side of a substrate, IC chip 26 can be mounted on the same sideof the substrate as the electrodes, or on another side of the substrate.If the first and second electrodes are mounted on different surfaces ofa substrate or on different substrates altogether, IC chip 26 can bemounted on the same surface as either of the electrodes, or on adifferent surface or substrate altogether. However, it is preferred thatthe IC chip 26 be mounted in close proximity to the electrodes.

Preferably, first electrode E1 is a solid conductor. However, firstelectrode E1 may also have a plurality of apertures or may have a meshor grid pattern. In some embodiments, second electrode E2 will take theform of a narrow ribbon partially surrounding first electrode E2. Inother embodiments, such as where first and second electrodes E1 and E2are merely adjacent each other, second electrode E2 may also be a solidconductor or may have a mesh or grid pattern.

Control circuit 24 may be designed in many different ways, and it may beused with a variety of power sources, such as AC, periodically varyingDC (such as a square wave), continuous DC, or others. FIGS. 4-7illustrate a preferred control circuit design which may be easilyadapted for use with a variety of power supplies, in a variety ofoperating modes. The FIG. 4 embodiment uses square wave DC power in adifferential input, strobed mode of operation; the FIG. 5 embodimentuses continuous DC power in a differential input, continuous DC mode;the FIG. 6 embodiment uses square wave DC power in a single-ended input,strobed mode; and the FIG. 7 embodiment uses continuous DC power in asingle-ended input, continuous DC mode.

It is apparent from FIGS. 4-7 that control circuit 24 can be readilyadapted for various different operating modes. The foregoing fouroperating modes will be described in detail to demonstrate the designflexibility allowed by the invention. However, it should be recognizedthat the invention is by no means limited to these four operating modes.The particular operating mode and power source used in a specificapplication depends primarily on the requirements and specifications ofthe controlled device.

Boxed areas B1 and B2 on FIGS. 4-7 indicate the demarcation betweencomponents contemplated to be located on IC chip 26 and componentslocated off of IC chip 26, such as electrodes E1 and E2, resistors R1and R2, the controlled device (not shown), and input and output lines 30and 32, respectively. The portions of FIGS. 4-7 which are outside boxedareas B1 and B2 are contemplated to be located on IC chip 26 and areidentical for all four figures and operating modes depicted therein.Boxed area B6 contains the input portion of the control circuit. Variousconfigurations of the input portion contained in boxed area B6 arediscussed with reference to FIGS. 11A-18E, below.

FIGS. 4-7 illustrate a control circuit 24 comprising a startup and biassection 40, a pulse generator and logic section 50, a decision circuitsection 60, and a self-holding latch section 70, the functions of whichwill be described below. Each of the foregoing circuit sections 40, 50,60 and 70 may be designed in a number of different ways, as would beknown to those skilled in the art of electronic integrated circuitdesign.

Control circuit 24 also comprises first, second, and third transistorsP1, P2, and P3. In the embodiments described herein, transistors P1-P3are P-MOS devices, although N-MOS devices, bipolar devices, or othertransistor types can also be used. Control circuit 24 further comprisesan inverter I1, first, second, and third diodes D1-D3, first and secondcapacitors C1 and C2, first, second, third, and fourth transistorswitches SW1-SW4, and third and fourth resistors R3 and R4. It should berecognized that third and resistors R3 and R4 may be replaced withcurrent sources or active loads.

In each of the embodiments illustrated in FIGS. 4-7, source terminal 77of third transistor P3 and power input terminals 41, 51, 61, and 71 ofstartup and bias section 40, pulse generator and logic section 50,decision circuit 60, and self-holding latch section 70, respectively,are electrically coupled to terminal PIN8 of IC chip 26. Terminal PIN8is in turn electrically coupled to control circuit 24 power input line30, which is in turn electrically coupled to a power source 25.Typically, power source 25 is located at the controlled device (notshown).

A biasing output terminal 43 from startup and bias section 40 iselectrically coupled to gate terminals G2 and G4 of second and fourthtransistor switches SW2 and SW4, respectively. In the preferredembodiment and as described herein with respect to FIGS. 4-7, firstthrough fourth transistor switches SW1-SW4 are N-MOS devices, althoughother transistor types and combinations may be used, as well, as shownin FIGS. 11A-18E.

A power-on reset output 44 from startup and bias section 40 iselectrically coupled to a power on reset input 54 at pulse generator andlogic section 50. Power on reset output 44 of startup and bias section40 is also electrically coupled to gate terminals G1 and G3 of first andthird transistor switches SW1 and SW3.

Internal ground reference output 42 from the startup and bias section 40is electrically coupled to low potential plates 102 and 103 of first andsecond capacitors C1 and C2, source terminals S1, S2, S3, and S4 offirst through fourth transistor switches SW1-SW4, respectively, internalground reference output 52 of the pulse generator and logic section 50,internal ground reference output 62 of decision circuit 60, anode 98 ofthird diode D3, low potential ends 96 and 97 of third and fourthresistors R3 and R4, and to terminal PIN6 of IC chip 26. The node thusdescribed will hereinafter sometimes be referred to as the internalground reference CHIP VSS.

A pulse output 53 from pulse generator and logic section output 50 iselectrically coupled to source terminals 80 and 81 of first and secondtransistors P1 and P2, respectively, and to terminal PIN2 of IC 26. Gateterminal 82 of first transistor P1 is electrically coupled to terminalPIN1 of IC 26. Gate terminal 83 of second transistor P2 is electricallycoupled to terminal PIN3 of IC 26.

Drain terminal 84 of first transistor P1 is electrically coupled toanode 90 of first diode D1 and to high potential end 94 of thirdresistor R3. Drain terminal 85 of second transistor P2 is electricallycoupled to anode 91 of second diode D2 and to high potential end 95 offourth resistor R4.

Cathode 92 of first diode D1 is electrically coupled to PLUS inputterminal 64 of decision circuit 60, to drain terminals 86 and 87 offirst and second transistor switches SW1 and SW2, and to high potentialplate 100 of first capacitor C1. Cathode 93 of second diode D2 iselectrically coupled to MNUS input terminal 66 of decision circuit 60,to drain terminals 88 and 89 of third and fourth transistor switches SW3and SW4, and to high potential plate 101 of second capacitor C2.

Logic output 63 of decision circuit 60 is electrically coupled to input75 of inverter I1 and to latch trigger input 73 of self-holding latchsection 70. Output 72 of self-holding latch section 70 is electricallycoupled to terminal PIN4 of IC 26.

In the illustrated embodiments, decision circuit section 60 is designedso that its output 63 is at a low potential when its PLUS and MINUSinputs 64 and 66, respectively, are at substantially equal potentials orwhen MINUS input 66 is at a substantially higher potential than PLUSinput 64. Decision circuit section 60 output 63 is at a high potentialonly when PLUS input 64, is at a substantially higher potential thanMINUS input 66.

Self-holding latch section 70 is designed so that no current flowsthrough latch section 70 from the control circuit 24 power supply 25 tointernal ground reference CHIP VSS and through third diode D3 whendecision circuit section 60 logic output 63 is at a low potential.However, when decision circuit 60 section logic output 63 is at a highpotential, latch trigger input 73 is at a high potential, thustriggering latch circuit 70 and enabling current to flow through latchsection 70 from control circuit 24 power supply 25 to internal groundreference CHIP VSS and through third diode D3, by way of latch 70 powerinput and output terminals 71 and 72, respectively. Once latch 70 hasbeen triggered, it remains triggered, or sealed in, until power isremoved from control circuit 24. The design and construction of a latchsection which operates in this manner is known to those skilled in theart and need not be described in detail herein.

Output terminal 76 of inverter I1 is electrically coupled to gateterminal 78 of third transistor P3. Drain terminal 79 of thirdtransistor P3 is electrically coupled to terminal PIN7 of IC 26.

Third diode D3 is provided to prevent back-biasing of control circuit 24when touch switch apparatus 20 is used in multiplexed applications. Itcan be omitted in applications where only a single touch pad 22 is used,or where multiple touch pads 22 are used, but not multiplexed.

The foregoing description of the basic design of control circuit 24 isidentical for each of the four operating modes depicted in FIGS. 4-7.The distinctions in overall apparatus configuration among the fouroperating modes lie primarily in the external terminal connections of IC26, as will be described in detail below. FIG. 4 illustrates a touchswitch apparatus 20 configured for operation in differential inputstrobed mode, as described below. Control circuit 24 for operation inthis mode is configured as described hereinabove for FIGS. 4-7generally. Terminal PIN2 of IC 26 is electrically coupled to highpotential ends 104 and 105 of first and second resistors R1 and R2,respectively. Terminal PIN1 of IC 26 is electrically coupled to both lowpotential end 106 of first resistor R1 and to first electrode E1.Terminal PIN3 of IC 26 is electrically coupled to both low potential end107 of second resistor R2 and to second electrode E2.

The circuit elements represented as C3 and C4 in FIGS. 4-7 are notdiscrete electrical components. Rather, reference characters C3 and C4represent the capacitance-to-ground of first and second electrodes E1and E2, respectively.

Terminal PIN8 of IC 26 is electrically coupled to input line 30, whichis in turn electrically coupled to a power signal source 25 at, forexample, the controlled device (not shown). Terminal PIN4 of IC 26 iselectrically coupled to terminal PIN6 of IC 26, thereby electricallycoupling output terminal 72 of latch 70 to the internal ground referenceCHIP VSS and anode 98 of third diode D3. Terminal PIN7 of IC chip 26 isnot externally terminated in this embodiment. Terminal PIN5 of IC 26 iselectrically coupled to output line 32, which is in turn electricallycoupled to high potential end 108 of fifth resistor R5 and to outputline 120, which is connected to the controlled device (not shown),either directly or by way of a processor or other intermediate device(not shown). Low potential end 109 of resistor R5 is electricallycoupled to the system ground. In a typical application, resistor R5 willbe at a substantial distance from the other components comprising touchswitch apparatus 20. That is, in the preferred embodiment, resistor R5is contemplated not to be near touch pad 22 and control circuit 24.

FIG. 5 illustrates a typical touch switch control circuit 24 configuredfor operation in differential input continuous DC mode, as describedbelow. The overall control circuit and apparatus is identical to thatdescribed for FIG. 4 hereinabove, with three exceptions. First, in theFIG. 5 embodiment, terminal PIN7 of IC 26 is electrically coupled tohigh potential end 108 of resistor R5 and to output line 120, which isconnected to the controlled device (not shown) either directly or by wayof a processor or other intermediate device (not shown), whereasterminal PIN7 is not externally terminated in the FIG. 4 embodiment.Second, in the FIG. 5 embodiment, terminals PIN4 and PIN6 of IC 26 arenot electrically coupled to each other or otherwise externallyterminated, whereas they are in the FIG. 4 embodiment. Third, in theFIG. 5 embodiment, terminal PIN5 of IC 26 is electrically coupled to lowpotential end 109 of resistor R5, whereas in the FIG. 4 embodiment,terminal PIN5 of IC 26 is electrically coupled to high potential end 108of fifth resistor and to the controlled device (not shown). As in theFIG. 4 embodiment, fifth resistor R5 will typically be at a substantialdistance from the other components comprising touch switch apparatus 20.

FIG. 6 illustrates a typical touch switch control circuit configured foroperation in single-ended input strobed mode, as described below.Control circuit 24 is configured as described hereinabove for FIGS. 4-7generally. Terminal PIN2 of IC 26 is electrically coupled to highpotential ends 104 and 105 of first and second resistors R1 and R2,respectively. Terminal PIN1 of IC 26 is electrically coupled to both lowpotential end 106 of first resistor R1 and to first electrode E1.Terminal PIN3 of IC 26 is electrically coupled to both low potential end107 of second resistor R2 and to high potential end 110 of sixthresistor electrode R6, such that second resistor R2 and sixth resistorR6 form a voltage divider. Low potential end 111 of sixth resistor R6 iselectrically coupled to internal ground reference CHIP VSS, typically ata point proximate terminal PIN5 of IC 26. In FIG. 6, the electricalconnection of sixth resistor R6 to the internal ground reference CHIPVSS is represented by broken line “A-A” for clarity.

Terminal PIN8 of IC 26 is electrically coupled to input line 30, whichis in turn electrically coupled to a power signal source 25. TerminalPIN5 of IC 26 is electrically coupled to output line 32, which is inturn electrically coupled to high potential end 108 of fifth resistor R5and to output line 120. Output line 120 is electrically coupled to thecontrolled device (not shown), either directly or by way of a processoror other intermediate device. Terminal PIN4 of IC 26 is electricallycoupled to terminal PIN6 of IC 26. Terminal PIN 7 of IC 26 is notexternally terminated in this embodiment. In a typical application,fifth resistor R5 will be at a substantial distance from the othercomponents comprising touch switch apparatus 20.

FIG. 7 illustrates a typical touch switch control circuit configured foroperation in single ended input continuous DC mode, as described below.Control circuit 24 is configured as described hereinabove for FIGS. 4-7generally. The overall control circuit and apparatus is identical tothat described for FIG. 6 hereinabove, with three exceptions. First, inthe FIG. 7 embodiment, terminal PIN7 of IC 26 is electrically coupled tohigh potential end 108 of fifth resistor R5 and to output line 120,which is in turn connected to the controlled device (not shown),typically by way of a microprocessor or other controller (not shown).Terminal PIN7 of IC 26 is not externally terminated in the FIG. 6embodiment. Second, in the FIG. 7 embodiment, terminals PIN4 and PIN6 ofIC 26 are not electrically coupled or otherwise externally terminated,whereas they are in the FIG. 6 embodiment. Third, in the FIG. 7embodiment, terminal PIN5 of IC 26 is electrically coupled to lowpotential end 109 of fifth resistor R5, whereas in the FIG. 6embodiment, terminal PIN5 of IC 26 is electrically coupled to highpotential end 108 of fifth resistor and to output line 120. In a typicalapplication, fifth resistor R5 will be at a substantial distance fromthe other components comprising touch switch apparatus 20. In FIG. 7,the electrical connection of sixth resistor R6 to the internal groundreference CHIP VSS is represented by broken line “A-A” for clarity.

A touch switch apparatus 20 configured for the differential inputstrobed mode operates as follows. Referring to FIG. 4, a power/controlsignal 25 is provided to terminal PIN8 of IC 26 and, in turn, to powerinput terminals 41, 51, 61, and 71 of start up and bias section 40,pulse generator and logic section 50, decision circuit section 60, andself-holding latch section 70, respectively.

Upon becoming powered, and after a suitable delay interval to allow forstabilization (approximately 25 microseconds is sufficient but may beeither shorter or longer depending on the application), start up andbias section 40 outputs a short duration power-on reset signal fromoutput terminal 44 to gate terminals G1 and G3 of first transistorswitch SW1 and third transistor switch SW3, respectively, causing firstand third transistor switches SW1 and SW3 to turn on, and thus providinga current path from high potential plates 100 and 101 of first andsecond capacitors C1 and C2, respectively, to the internal groundreference CHIP VSS. The power on reset signal duration is sufficient toallow any charge present on first and second capacitors C1 and C2 to besubstantially completely discharged to the internal ground referenceCHIP VSS. In this manner, PLUS and MINUS inputs 64 and 66 to decisioncircuit section 60 attain an initial low-potential state.

At substantially the same time, start up and bias circuit 40 sends apower on reset signal from output 44 to input 54 of pulse generator andlogic section 50, thus initializing it. After a suitable delay to allowpulse generator and logic section 50 to stabilize, pulse generator andlogic section 50 generates a pulse and outputs it from pulse outputterminal 53 to first and second electrodes E1 and E2 by way of first andsecond resistors R1 and R2, and to source terminals 80 and 81 of firstand second transistors P1 and P2, respectively. The pulse may be of anysuitable waveform, such as a square wave pulse.

Startup and bias circuit 40 also outputs a bias voltage from bias output43 to gate terminals G2 and G4 of second and fourth transistor switchesSW2 and SW4, respectively. The bias voltage is out of phase with thepulse output to first and second electrodes E1 and E2. That is, when thepulse output is at a high state, the bias voltage output is at a lowstate and when the pulse output is at a low state, the bias voltageoutput is at a high state.

When a pulse is applied to first and second electrodes E1 and E2 throughfirst and second resistors R1 and R2, respectively, the voltage at gateterminals 82 and 83 of first and second transistors P1 and P2 isinitially at a lower potential than that at source terminals 80 and 81of first and second transistors P1 and P2, respectively, thus biasingfirst and second transistors P1 and P2 and causing them to turn on. Withfirst and second transistors P1 and P2 turned on, current will flowthrough third and fourth resistors R3 and R4, thus creating a peakpotential at anode terminals 90 and 91 of first and second diodes D1 andD2, respectively.

If the peak potential at anodes 90 and 91 of first and second diodes D1and D2 is higher than the potential across first and second capacitors C1 and C2, a peak current is established through first and second diodesD1 and D2, causing first and second capacitors C1 and C2 to becomecharged, and establishing a peak potential at each of PLUS and MINUSinputs 64 and 66 to decision circuit section 60. This situation willoccur, for example, following the first pulse after control circuit 24has been initialized because first and second capacitors C1 and C2 willhave become discharged upon startup, as described above.

As is evident to one skilled in the art, the biasing of first and secondtransistors P1 and P2, the current through third and fourth resistors R3and R4, the peak potential created at anodes 90 and 91 of first andsecond diodes D1 and D2, and the peak potential created at each of PLUSand MINUS inputs 64 and 66 to decision circuit 60 are proportional tothe condition of the electric field at first and second electrodes E1and E2. The condition of the electric field proximate electrodes E1 andE2 will vary in response to stimuli present proximate the electrodes.

With control circuit 24 activated, as described above, and with nostimuli present proximate either first and second electrodes E1 and E2,the potentials at each of PLUS and MINUS inputs 64 and 66 to decisioncircuit 60 are in what may be termed a neutral state. In the neutralstate, the potentials at each of PLUS and MINUS inputs 64 and 66 may besubstantially equal. However, in order to prevent unintended actuations,it may be desirable to adjust control circuit 24 so that the neutralstate of MINUS input 66 is at a somewhat higher potential than theneutral state of PLUS input 64. This adjustment may be effected byvarying the configurations of first and second electrodes E1 and E2 andthe values of first and second resistors R1 and R2 to achieve thedesired neutral state potentials. Regardless of the neutral statepotentials, it is contemplated that decision circuit 60 output 63 willbe at a low potential unless PLUS input 64 is at a substantially higherpotential than

With decision circuit 60 output 63 at a low potential, inverter I1causes the potential at gate terminal 78 of third transistor P3 to be ata high level, substantially equal to the potential at source terminal77. In this state, third transistor P3 is not biased and will remainturned off. However, in this embodiment, terminal PIN7 of IC 26 is notterminated. Drain terminal 79 of third transistor P3 is therefore in anopen-circuit condition, and the state of third transistor P3 is of noconsequence to the function of the apparatus. Also, with decisioncircuit 60 output 63, and consequently latch trigger input 73, at a lowstate, self holding latch circuit 70 will not be triggered, and nocurrent will flow through latch 70 from power supply 25 to the internalground reference CHIP VSS and through third diode D3.

Over a period of time which is determined by the pulse voltage, thevalues of first and second resistors R1 and R2, and the capacitance toground of first and second electrodes E1 and E2 (represented in thefigures as virtual capacitors C3 and C4), the potential at first andsecond electrodes E1 and E2 eventually rises to substantially equal thepulse voltage and thus the voltage at source terminals 80 and 81 offirst and second transistors P1 and P2, thus unbiasing first and secondtransistors P1 and P2. When this state is reached, first and secondtransistors P1 and P2 turn off, and the potentials at anodes 90 and 91of first and second diodes D1 and D2 begin to decrease at asubstantially equal rate towards the internal ground reference CHIP VSSlevel. Eventually, the anode potential at each of first and seconddiodes D1 and D2 is likely to fall below the respective cathodepotential. At this point, diodes D1 and D2 become reverse biased andprevent first and second capacitors C1 and C2 from discharging.

When the pulse on output 53 goes to a low state, the bias voltage outputgoes to a high state relative to the internal ground reference CHIP VSS,and applies the elevated bias voltage to gate terminals G2 and G4 ofsecond and fourth transistor switches SW2 and SW4. In this state, secondand fourth transistor switches SW2 and SW4 become slightly biased andturn on sufficiently to effect a slow, controlled discharge of first andsecond capacitors C1 and C2 to the internal ground reference CHIP VSS.When the pulse next goes to a high state, the bias voltage will returnto a low state, second and fourth transistor switches SW2 and SW4 willturn off, and the circuit will respond as described initially.

If a stimulus is present at or near second electrode E2 when the pulsefrom pulse generator and logic section 50 goes to a high potential,first transistor P1 will operate as described hereinabove. That is,first transistor P1 will be initially biased and will allow some currentto flow through third resistor R3, creating a peak potential at anode 90of first diode D1, and allowing a peak current to flow through firstdiode D1, thereby charging first capacitor C1, and establishing a peakpotential at PLUS input 64 to decision circuit 60. Once the voltage atfirst electrode E1 has stabilized in response to the incoming pulse,first transistor P1 will become unbiased and will turn off.

Second transistor P2 operates in much the same way, except that thepresence of the stimulus proximate second electrode E2 will alter the RCtime constant for that circuit segment, thus lengthening the timerequired for the potential at second electrode E2 to stabilize. As aconsequence, second transistor P2 will remain biased on for a longerperiod of time than first transistor P1, allowing a greater peak currentto flow through fourth resistor R4 than flows through third resistor R3,thus generating a peak potential at anode 91 of second diode D2 which isgreater than the peak potential present at anode 90 of first diode D1.Consequently, a peak current will flow through second diode D2, causingsecond capacitor C2 to become charged, ultimately resulting in a peakpotential at MINUS input 66 to decision circuit 60 which is greater thanthe peak potential at PLUS input 64 to decision circuit. Since decisioncircuit 60 is configured so that its output will be at a low potentialwhen the potential at MINUS input 66 is greater than or substantiallyequal to the potential at the PLUS input 64, decision circuit 60 outputterminal 63 will be at a low potential.

With decision circuit 60 output terminal 63, and consequently latchtrigger input terminal 73, at a low potential, self holding latch 70will not be triggered. Inverter I1 and third transistor P3 will operatedas described previously, although, again, the state of third transistorP3 is inconsequential in this configuration.

In the event that a contaminant or foreign object, or other stimulus,substantially covers, or is applied to, both first and second electrodesE1 and E2, the system will respond much in the same way as it would whenno stimulus is present at either the first electrode or secondelectrode. However, with contaminants or a foreign object presentproximate both electrodes E1 and E2, the RC time constant for thosesegments of the circuit will be altered such that it will take longerfor the voltage at both first and second electrodes E1 and E2,respectively, to substantially equalize with the pulse voltage.Consequently, both first and second transistors P1 and P2 will turn onand will allow more current to flow through third and fourth resistorsR3 and R4 than they would in a condition where neither first nor thesecond electrode E1 or E2 is affected by a stimulus. However, first andsecond transistors P1 and P2 will be substantially equally biased.Therefore, a substantially equal peak potential will be developed atanodes 90 and 91 of both first and second diodes D1 and D2, causing asubstantially equal peak current to flow through first and second diodesD1 and D2, charging first and second capacitors C1 and C2, andestablishing a substantially equal peak potential at both PLUS and MINUSinputs 64 and 66 to decision circuit 60. In this state, decision circuitsection 60 output terminal 63 will be at a low potential, latch triggerinput terminal 73 of self holding latch 70 will be at a low potential,and latch 70 will remain untriggered. As previously described, the stateof inverter I1 and third transistor P3 is inconsequential in thisembodiment.

In the situation where a stimulus is applied proximate first electrodeE1, but not second electrode, second transistor P2 will be initiallybiased and will turn on, establishing a current through fourth resistorR4, and generating a peak potential at anode terminal 90 of second diodeD2. A peak current will flow through second diode D2, charging secondcapacitor C2, and establishing a peak potential at MINUS input 66 ofdecision circuit section 60. As the voltage at gate terminal 81 ofsecond transistor P2 rises to the level of the pulse voltage, secondtransistor P2 will become unbiased and will turn off. Second diode D2will then become reverse biased, and will prevent second capacitor C2from discharging.

As is evident to one skilled in the art, the presence of a stimulusproximate first electrode E1 will lengthen the time required for thepotential at first electrode E1 to stabilize. As a consequence, firsttransistor P1 will remain biased on for a longer period of time thansecond transistor P2, allowing a greater peak current to flow throughthird resistor R3 than through fourth resistor R4, thus generating apeak potential at anode 90 of first diode D1 which is greater than thepotential present at anode 91 of second diode D2. Consequently, a peakcurrent of greater magnitude and/or duration will flow through firstdiode D1 than through second diode D2, causing first capacitor C1 tobecome charged, ultimately resulting in a peak potential at PLUS input64 to decision circuit 60 which is substantially greater than the peakpotential at MINUS input 66 to decision circuit 60. Since decisioncircuit 60 is configured so that output terminal 63 will be at a highstate when the potential at PLUS input 64 is greater than the potentialat MINUS input 66, decision circuit 60 output 63 will be at a highpotential.

With decision circuit 60 output 63 at a high potential, inverter I1 willcause potential at gate terminal 78 of third transistor P3 to be lowrelative to the potential at source terminal 77, thus biasing thirdtransistor P3, and causing it to turn on. However, since terminal PIN7of IC 26 is not terminated in this embodiment, the state of thirdtransistor P3 is of no consequence.

With decision circuit 60 output terminal 63 at a high potential, selfholding latch circuit 70 trigger input terminal 73 will also be at ahigh potential, thus triggering latch 70. When self holding latch 70 istriggered, a current path is established from power supply 25 tointernal ground reference CHIP VSS and through third diode D3,effectively short circuiting the remainder of control circuit 24,including startup and bias section 40, pulse generator and logic section50, and decision circuit section 60. In this state, those sections ofcontrol circuit 24 become substantially de-energized and cease tofunction.

Once triggered, self holding latch 70 will remain triggered, regardlessof the subsequent state of stimuli proximate either or both ofelectrodes E1 and E2. Latch 70 will reset when the power from the powersupply 25 goes to a near zero state, such as when the square wave strobesignal from power supply 25 of this example falls to zero.

While self holding latch 70 is in the triggered state, a steady statesignal will be supplied through fifth resistor R5 and back to thecontrolled device (not shown). In this manner, touch switch apparatus 20emulates the change of state associated with a maintained-contactmechanical switch.

Referring now to FIG. 5, the operation of a touch switch apparatus 20configured for the differential input continuous DC mode is as follows.The control circuit 24, up to and including decision circuit 60,performs in substantially the same manner as when configured for thedifferential input strobed mode of operation, as described above withreference to FIG. 4. That is, with no stimulus present proximate eitherfirst or second electrodes E1 and E2, with a stimulus present proximateboth first and second electrodes E1 and E2, or with a stimulus presentproximate second electrode E2, but not first electrode E1, the decisioncircuit 60 output 63 will be at a low potential. With a stimulus presentproximate first electrode E1, but not second electrode E2, the decisioncircuit 60 output 63 will be at a high level.

As can be readily seen in FIG. 5, self holding latch circuit 70 output72 is not terminated in this embodiment, and the self holding latch 70is therefore inoperative in differential input DC mode. However, drainterminal 79 of third transistor P3 is electrically coupled to internalground reference CHIP VSS and to output line 32 in this embodiment, andit therefore becomes an operative part of control circuit 24. Whendecision circuit 60 output 63 is at a low potential, inverter I1 causesthe potential at gate terminal 78 of third transistor P3 to be at a highpotential, substantially equal to the potential source terminal 77. Inthis state, third transistor P3 is not biased and does not turn on. Whendecision circuit 60 output 63 is at a high potential, inverter I1 causesthe potential at gate terminal 78 of third transistor P3 to be at a lowpotential compared to the potential at source terminal 77. In thisstate, third transistor P3 is biased and turns on, allowing current tobe established through third transistor P3 and fifth resistor R5. Outputline resistor R5 limits the current through third transistor P3 suchthat the balance of control circuit 24 is not short circuited andremains operative.

In the DC mode shown in FIG. 5, control circuit 24 also responds to theremoval of the stimulus from the proximity of first electrode E1. Solong as a stimulus remains present proximate first electrode E1, but notsecond electrode E2, each time the pulse goes to a high state, a peakpotential will be created at anode 90 of first diode D1 which is higherthan the peak potential at anode 91 of second diode D2. Consequently,the peak potential at PLUS input 64 to decision circuit 60 will be at ahigher level than the peak potential at MINUS input 66 and controlcircuit 24 will behave as described above. When the stimulus is removed,however, and no stimulus is present proximate either first electrode E1or second electrode E2, the charge on first capacitor C1 will eventuallydischarge to a neutral state by means of the biasing function of secondtransistor switch SW2. At this point, the potential at PLUS input 64 ofdecision circuit 60 will no longer be higher or substantially higherthan the potential at MINUS input 66, and decision circuit 60 output 63will return to a low state.

In this manner, touch switch apparatus 20 operating in differentialinput DC mode emulates a momentary contact, push-to-close andrelease-to-open, mechanical switch. It should be recognized that, withminor revisions, the control circuit could be configured to emulate apush-to-open and release-to-close mechanical switch.

Referring now to FIG. 6, touch switch apparatus 20 configured for thesingle ended input strobed mode of operation operates as follows. When apulse is applied to first electrode E1 and first and second resistors R1and R2, current flows through second resistor R2 and sixth resistor R6.Second and sixth resistors R2 and R6 are configured as a voltagedivider; that is, when the pulse output is in a high state, gateterminal 83 of second transistor P2 will be at a lower potential thansource terminal 81 of second transistor P2. Therefore, when pulse output53 is in a high state, second transistor P2 will be continuously biasedand will allow a constant current to flow through fourth resistor R4,thus creating a reference potential at anode 91 of second diode D2. Thereference potential at anode 91 of second diode D2 will establish acurrent through second diode D2, causing second capacitor C2 to becomecharged, and thus creating a reference potential at MINUS input 66 todecision circuit 60. When the reference potential at MINUS input 66becomes substantially equal to the reference potential at anode 91 ofsecond diode D2, the current through second diode D2 will cease.

Concurrently, with no stimulus present at first electrode E1, the pulseapplied to source terminal 80 of first transistor P1 and to firstelectrode E1 will initially cause first transistor P1 to become biasedand to turn on. A current will thus be established through thirdresistor R3 and a peak potential will be created at anode 90 of firstdiode D1. The peak potential will establish a peak current through firstdiode D1, charging first capacitor C1 and creating a peak potential atPLUS input 64 of the decision circuit. Resistors R1, R2, R3, R4, and R6are selected so that when no stimulus is present proximate firstelectrode E1, the reference potential at MINUS input 66 of decisioncircuit 60 will be greater than or equal to the peak potential at toPLUS terminal 64 of decision circuit 60.

In this state, output 63 of the decision circuit 60 will be at a lowpotential and self holding latch 70 will not be triggered. Also,inverter I1 will cause the potential at gate terminal 78 of thirdtransistor P3 to be at a high state, substantially equal to the sourceterminal 77 potential, so that third transistor P3 is unbiased andremains turned off. However, this is of no consequence since drainterminal 79 of third transistor P3 is in an open-circuit condition inthis embodiment.

This embodiment does not require a second electrode, although atwo-electrode touch pad may be adapted for use in this mode. In theevent a two-electrode touch pad is adapted for use in this mode ofoperation, the presence or absence of a stimulus proximate the secondelectrode has no effect on the operation of the circuit.

In the event that a stimulus is present proximate first electrode E1,the operation of second transistor P2 is the same as describedhereinabove for this embodiment. However, the presence of the stimulusproximate first electrode E1 will cause a greater time to be requiredfor the voltage at gate terminal 82 of first transistor P1 to becomeequalized with source terminal 80 potential at first transistor.Consequently, first transistor P1 will be turned on and will allow arelatively greater current to flow through third resistor R3, comparedto the current that second transistor P2 allows to flow through fourthresistor R4. As a result, the peak potential at anode 90 of first diodeD1 will be greater than the reference potential at anode 91 of seconddiode D2. As a result, the peak potential at PLUS input 64 of decisioncircuit 60 will be greater than the reference potential at MINUS input66 of decision circuit 60, and output 63 from decision circuit 60 willtherefore be at a high state. With output 63 of decision circuit 60 at ahigh state, inverter I1 causes the potential at gate terminal 78 ofthird transistor P3 to be at a low state, thus turning transistor P3 on.However, since drain terminal 79 of third transistor P3 is effectivelynot terminated, this is of no consequence.

With output 63 of decision circuit 60 at a high state, latch triggerinput 73 is at a high state, and self holding latch 70 is triggered,thus establishing a current path through latch section 70, from powersupply 25 to internal ground reference CHIP VSS and through third diodeD3, thereby effectively short circuiting the balance of control circuit24. Self holding latch 70 will remain in this state until power to latchinput terminal 71 is removed. Until latch 70 is thus reset, a continuousdigital control signal is output to the controlled device (not shown).In this manner, touch switch apparatus 20 emulates a change of stateassociated with a mechanical switch.

Referring now the FIG. 7, a touch switch apparatus 20 configured foroperation in the single ended input continuous DC mode operates asfollows. The operation and functionality of control circuit 24 issubstantially the same as described for the single ended input, strobedmode as described hereinabove with reference to FIG. 6. However, in thesingle ended input, DC mode, self holding latch output 72 is opencircuited and self holding latch 70 is therefore not operative.

With no stimulus applied to first electrode E1, output 63 of decisioncircuit 60 is at a low potential. Consequently, inverter I1 output 76 togate terminal 78 of third transistor P3 is at a high potential. Withgate terminal 78 of third transistor P3 at a high potential, similar tothe potential at source terminal 77, third transistor P3 is unbiased anddoes not turn on, and therefore no current flows through thirdtransistor P3 or through fifth resistor R5.

With a stimulus proximate first electrode E1, output 63 of decisioncircuit 60, and consequently input 75 to inverter I1, is at a highstate. Inverter I1 changes the high level input to a low level output,and provides output 76 to gate terminal 78 potential of third transistorP3. With gate terminal 78 at a low potential compared to source terminal77, third transistor P3 is biased, it turns on, and current flowsthrough third transistor P3 and fifth resistor R5. This creates anelevated potential at anode 108 of fifth resistor R5 which may be usedas an input to the controlled device (not shown) via output line 120.

In the continuous DC mode of FIG. 7, the control circuit responds to theremoval of the stimulus from the proximity of first electrode E1. Solong as the stimulus remains present proximate first electrode E1, eachtime the pulse goes to a high state, a peak potential will be created atanode 90 of first diode D1 which is higher than the reference potentialat anode 91 of second diode D2. Consequently, the peak potential at PLUSinput 64 to the decision circuit 60 will be at a higher level than thereference potential at the MINUS input 66 and control circuit 24 willbehave as described above. When the stimulus is removed from firstelectrode E1, the charge on first capacitor C1 will eventually dischargeto a neutral state by means of the biasing function of second transistorswitch SW2. At this point, the peak potential at PLUS input 64 ofdecision circuit 60 will no longer be higher or substantially higherthan the reference potential at MINUS input 66, and decision circuit 60output 63 will return to a low state.

In this manner, touch switch apparatus 20 operating in single-endedinput DC mode emulates a momentary contact mechanical switch. With minorrevisions, the control circuit could be configured to emulate apush-to-open and release-to-close mechanical switch.

Thus far, this specification has described the physical construction andoperation of a single touch switch. Typical touch switch applicationsfrequently involve a plurality of touch switches which are used toeffect control over a device. FIG. 10 shows a switch panel comprisingnine touch switches 20, where the nine touch switches 20 are arranged ina three-by-three matrix. Box B4 represents components at the touchpanel, while box B5 represents components at the controlled device.Although any number of touch switches could theoretically be laid out inany manner, matrix layouts such as this one are readily multiplexable,reducing the number of necessary input and output lines from thecontrolled device, and are preferred.

Box B6 in FIG. 4 depicts an input portion of a touch switch controlcircuit, which includes active devices P1 and P2, diodes D1 and D2,resistors R3 and R4 and capacitors C1-C2. FIGS. 11A-18E depict otherconfigurations for the input portion of a touch switch control circuitinvolving active devices and peak detector circuits that fulfill some ofthe above described objects of the present invention, includingproviding for low impedance buffering, reducing the size and cost of theintegrated circuit, linearizing input signals, swamping straycapacitance and blocking damaging current paths. The configurationsdepicted in FIGS. 11A-18E correspond basically to the configuration inboxed area B6 of FIG. 4 as will be understood by those skilled in theart of circuit design. Specifically, active devices M1 and M2 in FIG.11A, for instance, correspond to active devices P1 and P2 in FIG. 4;active devices Q1 and Q2 in FIGS. 11A-18E correspond to diodes D1 and D2in FIG. 4; resistances R7 and R8 in FIG. 11A, for instance, correspondto resistors R3 and R4 in FIG. 4; and capacitances C9 and C10 in FIGS.11A-18E correspond to capacitors C1 and C2 in FIG. 4. Further,electrodes E1 and E2 and resistors R1 and R2 are the same in FIG. 4 asin those of FIGS. 11A-18E where they occur. Pins OSCB, I_RNG and O_RNGin those of FIGS. 11A-18E where they occur correspond to pins PIN2, PIN1and PIN3 of FIG. 4. Switches SW2 and SW4 in FIG. 4 correspond to activedevices M3 and M4 in FIG. 11A, for instance. Discharge signal DSCHGB inFIGS. 11A-18E corresponds to current bias on trace 43 from startup andbias circuitry 40 of FIG. 4. Traces POS and NEG of FIGS. 11A-18Ecorresponds to traces 64 and 66 of FIG. 4, respectively. Finally, traceOSCB in FIGS. 11A-18E corresponds to trace 53 from pulse generator andlogic circuitry 50 of FIG. 4. Thus, the input portions of FIGS. 11A-18Ecan be understood to be compatible with the circuit configurationsdescribed with reference to FIGS. 4-7.

FIG. 11A illustrates inner electrode E1 and outer electrode E2,electrically coupled to oscillating signal generator OSCB through pinOSCB and resistors R1 and R2, respectively. FIG. 11A further showsinter-electrode capacitance C6. Capacitances C7 and C8, which representthe bond pad and wiring bond capacitances inherent when electricalcomponents are coupled to an integrated control circuit, are also shown.Capacitances C7 and C8 can also represent other capacitances owing tounder-bump-metallization, redistribution traces and the like, in flipchip and other applications not involving bonding pad wires as would beknown to those skilled in the art.

In FIG. 11A, electrodes E1 and E2 are electrically coupled to the inputportion of the touch switch control circuit at the gates of activedevices M1 and M2, respectively, through pins I_RNG and O_RNG,respectively. In FIG. 11A, active devices M1 and M2 are shown as N-typeMOSFET devices. The drains of active devices M1 and M2 are electricallycoupled to voltage source VDD through resistors R7 and R8, respectivelyand their sources to oscillating signal OSCB.

The drains of active devices M1 and M2 are also electrically coupled torespective peak detection circuits consisting of active devices M3, M4,Q1 and Q2 and capacitors C9 and C10, which, as discussed above,correspond to the peak detection circuits shown in FIG. 4, havingcomponents switches SW2 and SW4, diodes D1 and D2, and capacitors C1 andC2, except that, since the input active devices M1 and M2 are N-MOSactive devices, where active devices P1 and P2 in FIG. 4 are P-MOSdevices, capacitances C9 and C10 and the sources of active devices M1and M2, through resistances R7 and R8, are coupled to signal VDD,instead of to voltage signal VSS. The peak detection circuit in FIG. 11Aassociated with active device M1 includes active device Q1, the base ofwhich is electrically coupled to the source of active device M1 throughtrace SNEG and also, through resistor R7, to voltage signal VDD, theemitter of which is electrically coupled to the drain of active deviceM3 and to capacitor C9, and the collector of which is coupled to voltagesignal VSS; capacitance C9, one terminal of which is electricallycoupled to voltage source VSS and the other terminal of which iselectrically coupled to the emitter of active device Q1 and the drain ofactive device M3; and active device M3, the drain of which iselectrically coupled to the emitter of active device Q1, the source ofwhich is coupled to voltage source VDD and the base of which iselectrically coupled to discharge signal DCHGB. The configuration of thepeak detection circuit associated with active device M2 is analogous andinvolves active devices Q2 and M4 and capacitance C10. In FIG. 11A,active devices Q1 and Q2 are P-type bipolar transistors, and activedevices M3 and M4 are P-type MOSFET devices. The emitters of activedevices Q1 and Q2 are electrically coupled as inputs to the decisioncircuit component (not shown) of the control circuit through traces NEGand POS, respectively. The operation of the decision circuit componentis as described above with respect to FIGS. 4-7.

In FIG. 11A, resistors R7 and R8 serve to convert drain currents tovoltages at the drains of active devices M1 and M2, respectively. Thesevoltages are related to changes in the electric fields of electrodes E1and E2 caused by touch or other stimuli. The voltage potential at therespective nodes of the drains of active devices M1 and M2 iscommunicated to the peak detectors through traces SNEG and SPOS,respectively. The peak detectors can convert the peak negative value ofvery fast transient pulses on traces SPOS and SNEG to DC signals ontraces POS and NEG, respectively, which are easier for the decisioncircuit to process. Thus, FIG. 11A illustrates a dual input systemhaving negative pulse peak detecting circuits. A similar positive pulsepeak detecting system is described in U.S. Pat. No. 5,594,222 for asingle channel. The sensing circuit that generates these negative pulsescould include an N-type MOSFET device that would be capable of pullinglow at a high rate and a current source pulling high in a softer manner.

Active devices M1 and M2 in FIG. 11A will be turned on and off, byoscillating signal OSCB communicated through both electrodes E1 and E2and pins I_RNG and O_RNG, to provide transient, negative-going pulses ontraces SNEG and SPOS, respectively. The negative maximum peak levels ofthese pulses will be proportional to the strength of the electric fieldsat input electrodes E1 and E2, which can change when electrodes E1 andE2 are stimulated by touch or otherwise.

The signals on traces SNEG and SPOS are then communicated to therespective bases of active devices Q1 and Q2 of the peak detectioncircuits corresponding to active devices M1 and M2. A low signalcommunicated to the bases of active devices Q1 and Q2 will bias them onand present the maximum negative voltage at the drains of active devicesM1 and M2 to traces NEG and POS, respectively. Capacitors C9 and C10,initially charged at VDD, slow the rate of this voltage change on tracesPOS and NEG and thereby convert the transient pulses of traces SPOS andSNEG to DC pulses on traces POS and NEG, as shown in the timing diagramof FIG. 11A. Active devices Q1 and Q2 then isolate capacitors C9 and C10from charging once the transient signal is over. Active devices M3 andM4, controlled by discharge signal DCHGB, can then reset the initialcharge VDD of capacitors C9 and C10, respectively.

Using short duration pulses advantageously allows the touch sensor tomaintain a low impedance. Also, the control circuit consumes low averagepower. For instance, the peak current through the input electrodecapacitance may be as high as several milliamps. This would correspondto a very low impedance during the time period that the peak currentpersists. If each pulse were active for even 20 nanoseconds and weresampled once every 50 microseconds, then the continuous average currentwould be 0.8 microamps for each channel, and 1.6 microamps for bothchannels. In addition, the input portion provides statistical filteringand periodic sampling of the sensing signals when discharge signal DCHGBis not active.

These low impedance and low average power consumption characteristicscan enhance the stimulus interpretation performance of the touch sensor,as described in U.S. Pat. No. 5,594,222 and can be advantageous whenreplacing mechanical switches, membrane switches and the like with touchsensing devices. Mechanical and other true switches do not allow currentto pass when they are open. A low impedance and low power solid-stateswitch mimics this characteristic of true switches and can thereby allowfor direct replacement of mechanical switches without risking thepassage of unacceptable amounts, of leakage current through an “open”solid-state switch. Also, the peak detector circuits of low impedanceand low average power touch switches are compatible with the use ofrelatively low gain and low bandwidth product amplifiers and op amps inthe decision and other circuits and DC and relatively low gain and lowbandwidth devices for the signal generating circuits.

FIG. 11B shows an input portion of an integrated control circuit whereinactive devices M1 and M2 are P-type MOSFET devices, active devices M3and M4 are N-type MOSFET devices and active devices Q1 and Q2 are N-typebipolar devices. FIG. 11B otherwise has the same configuration of FIG.11A, except that resistors R7 and R8 and the sources of active devicesM3 and M4 are coupled to voltage signal VSS and the collectors of activedevices Q1 and Q2 are coupled to voltage source VDD. FIG. 11B thusillustrates an embodiment using positive-going transient and DC pulses,as shown in the timing diagram of FIG. 11B. FIGS. 11C and 11D show inputportions wherein the active devices M1 and M2 of FIG. 11A have beenreplaced by active devices Q3 and Q4, which are N-type in FIG. 11C andP-type in FIG. 11D. FIG. 11C shows the peak detection circuit of FIG.11A, which involves P-type active devices Q1, Q2, M3 and M4, and FIG.11D shows the peak detection circuit of FIG. 11B, the active devices ofwhich are all N-type devices. The operation of these input portionconfigurations parallel the operation described above with respect toFIG. 11A and will be understood by those skilled in the art of circuitdesign.

FIGS. 11A-11D all show the use of resistors R7 and R8 which provide forthe conversion of drain or collector currents (of either active devicesM1 and M2 or Q3 and Q4, respectively) to voltages proportional to thecurrent at the drain or collector. Thus, in FIGS. 11A-11D, this drain orcollector voltage will be equal to V−(I_(r))(R). Other ways to providefor this voltage conversion are shown in FIGS. 12A-15D. In thesedrawings, resistors R7 and R8 have been replaced with active devices.

Use of active devices as current to voltage converters, as shown inFIGS. 12A-12D, for example, allows for high gain outputs withreplacement of resistive components and conserves integrated circuitspace. FIGS. 12A-12D generally correspond to FIGS. 11A-11D,respectively. In FIGS. 12A-12B, resistors R7 and R8 of FIGS. 11A-11Bhave been replaced by MOSFET devices M5 and M6, where in FIGS. 12C-12D,resistors R7 and R8 of FIGS. 11C-11D have been replaced by bipolardevices Q5 and Q6. FIGS. 13A-13D generally correspond to FIGS. 12A-12Dexcept that the P-type active device current sources of FIGS. 12A-12Dhave been replaced with N-type active device current sources in FIGS.13A-13D (and, similarly, the N-type active device current sources ofFIGS. 12A-12D been replaced with P-type active device current sources inFIGS. 13A-13D). Since the active loads are the same type as the inputdevices in FIGS. 13A-13D, these active devices can be incorporated intothe integrated circuit during the same manufacturing step. This providesfor better matching. The output gain is determined by the size of thedevice and the voltage reference, Vref, used. Vref can be set by a biascircuit that allows for currents to be mirrored by scaling the sizes ofgate widths, when using MOSFET devices, or emitter areas, when usingbipolar devices.

In the embodiments depicted in FIGS. 12E-12H and 13E-13H, resistors R7and R8 of FIGS. 11A-11D have been replaced with the active devices M5and M6 (FIGS. 12E-12F and 13E-13F) or Q5 and Q6 (FIGS. 12G-12H and13G-13H) as well as cascoding active devices M7 and M8 (FIGS. 12E-12Fand 13E-13F) or Q7 and Q8 (FIGS. 12G-12H and 13G-13H). Cascode biasingin this manner helps immunize the control circuit against power supplyand process variations.

FIGS. 14A-14D show embodiments using complementary device types. Forexample, in FIG. 14A, the active square root extraction devices M9 andM10 are P-type MOSFET devices and the input active devices M1 and M2 areN-type MOSFET devices. FIGS. 14B-14D show embodiments usingcomplementary device types which correspond to FIGS. 11B-11D. In FIGS.14C-14D, active square root extraction devices Q9 and Q10 are bipolardevices. The embodiments depicted in FIGS. 14A-14D provide for betterstability despite changes in temperature, power supply, common modenoise, and process variations during manufacturing of the integratedcircuit. FIGS. 15A-15D depict embodiments using active square rootextraction devices and active input devices of the same type. Thus, inFIG. 15A, active square root extraction devices M9 and M10 are N-typeMOSFET devices, as are input devices M1 and M2. Similar configurationsare shown in FIGS. 15B (using N-type MOSFET devices), 15C (using N-typebipolar devices) and 15D (using P-type bipolar devices). Outputlinearity can be maximized when matched MOSFET devices, i.e., MOSFETdevices of the same type, are used for both the input and the activesquare root extraction devices, as shown in FIGS. 15A-15B.

FIGS. 11A-15D all show input capacitances C7 and C8 on the integratedcircuit pin input connections I_RNG and O_RNG. These input capacitancescan vary from part to part owing to manufacturing tolerances andprocesses and the variations can compromise circuit performance. Thesevariations tend to add to the electric field capacitance of theelectrodes and can cause variations and offsets in the performance ofthe control circuit. Since typical applications often require the inputdetection circuit to resolve very small changes in the electric field atthe electrodes where the input capacitance at the bonding pad inputnodes can be relatively large compared to the input field effectcapacitance signal level, minimizing stray capacitance C7 and C8 can beadvantageous. One method to minimize the effects of this straycapacitance variation is to add “swamping” capacitors to the inputcircuit. While this may tend to desensitize the control circuit, it canstabilize the input against variations owing to the input capacitanceassociated with the bond wires, under-bump-metallization, redistributiontraces in flip chip configurations and the like. Use of swampingcapacitance is shown in FIG. 16, which generally corresponds to FIG.15A. In FIG. 16, swamping capacitors C11 and C12 exist in parallelequivalent with stray capacitance C7 and C8, respectively, and areelectrically coupled to voltage signal VSS. It will be understood thatswamping capacitors C11 and C12 are compatible with all of theembodiments of the present invention described herein, and are notlimited to use with the embodiment depicted in FIG. 16.

Though swamping capacitors C11 and C12 may improve the control circuit'sperformance, they will tend to require additional physical space. Spaceis conserved in the embodiment depicted in FIG. 17A, showing theaddition of swamping capacitance that results from the depletioncapacitance of diodes D4-D7 at the control circuit input, here, thegates of active devices M1 and M2. In FIG. 17A, diodes D4 and D6 replaceswamping capacitor C12 of FIG. 16 and diodes D5 and D7 replace swampingcapacitor C11 of FIG. 16. The amount of capacitance per unit surfacearea is much greater for diode configurations of the sort depicted inFIG. 17A compared to the capacitance per unit area of poly or metal typecapacitors. Also, diodes D4-D7 can be used for protection of bothpositive and negative high voltage potential discharges. This protectionis especially advantageous for touch input applications. Human inputdevices, such as keyboards, single input switches, and others, areexposed to electrostatic discharge transients and can includecomponents, such as MOSFET and other devices, to protect their sensitiveinput circuits. This problem is aggravated when, as shown in FIG. 17B,sensing electrodes E1 and E2 are located very close to the inputcircuits ICC.

FIGS. 18A- 18E show other possible configurations of the input circuitryfor touch switches with integrated control circuits. FIGS. 18A-18C showvarious alternatives to the common mode stimulation of active devices M1and M2. FIG. 18A shows generally the configuration of FIG. 17A and alsoincludes active devices M1-M14. In FIG. 18A, active devices M11-M14 areelectrically coupled to the sources of input active devices M1 and M2.The gates of active devices M13 and M14 are coupled to oscillatingsignal OSCB and their drains are coupled to the gate of active deviceM12. The gate of active device M11 is coupled to a current source biassignal CSBS and its drain is coupled to the source of active device M12.The configuration depicted in FIG. 18A can provide negative feedback atthe input stage to active devices M1 and M2.

FIG. 18B shows an input circuit portion including active devices M15 andM16, here shown as N-type devices, the sources of which are electricallycoupled to input pins I_RNG and O_RNG, respectively, and the gates ofwhich are electrically coupled to oscillating signal OSCB. The drains ofactive devices M15 and M16 are coupled to the sources of active squareroot extraction devices M9 and M10, respectively, and to the bases ofpeak detection circuit active devices Q1 and Q2, respectively. In FIG.18B, active devices M15 and M16, which are stimulated by oscillatingsignal OSCB through their gates and accept input signals through theirsources, take the place of active devices M1 and M2, which havepreviously been depicted as being stimulated through their sources andaccepting inputs through their gates.

FIG. 18C shows generally the configuration of FIG. 18B and also includesswamping diodes D4-D7 as also shown in FIG. 17A. The configuration ofFIG. 18C can also be employed in single input mode with one electrodeand can offer all the benefits of employing input diodes that providedepletion mode swamping capacitance.

FIG. 18D shows the configuration of FIG. 16, including swampingcapacitors C11 and C12, which balance the inputs to active devices M1and M2, but in single electrode mode with no outer electrode E2 or inputpin O_RNG. FIG. 18E shows the configuration of FIG. 18D, except thatswamping capacitance is provided by diodes D4-D7, as also shown in FIG.17A, minimizing the space needed to provide the benefits of swampingcapacitance, as discussed above.

FIG. 19 is an electrical schematic representation of a possibleconfiguration for an output circuit portion of the integrated circuitsof the present invention showing various output features and theirpossible configurations, including latch output LCH_O and itscomponents, which can function as self-holding latch 70 in FIGS. 4-7.These output features allow the touch cell to duplicate the responses ofconventional membrane or mechanical switches.

Output pins NDB_O, NE_O and ND_O are outputs of the touch cell andintegrated circuit assembly that will pull the output electrically lowthrough active devices. The integrated control circuit can be configuredto pull the output electrically low through active devices when there isa stimulus applied (for example, a human touch stimulus) or can beconfigured to pull the output electrically low through active deviceswhen there is a lack of stimulus (for example, no human touch stimulus).

As shown in FIG. 19, output pin NDB_O is electrically coupled to thedrain of active device M18, whose source is coupled to voltage signalVSS and whose gate is coupled to the input of inverter U2, the output ofinverter U2, the gate of active device M17 and voltage signal TP_O.Output pin NE_O is electrically coupled to the emitters of activedevices Q13 and Q14, the bases of which are coupled to the drain ofactive device M20 and the collectors of which are coupled to voltagesignal VSS. Active device M20 is in turn coupled at its gate to theoutput of inverter U2 and at its source to voltage signal VSS. Outputpin ND_O is electrically coupled to the bases of active devices Q13 andQ14 and to the drain of active device M20. Active device M20 can act asa negative pull down device for output NE_O and can bias on the gates ofactive devices Q13 and Q14 for output ND_O.

Output pins PDS_O, PD_O and PE_O are outputs of the touch cell andintegrated circuit assembly that will pull the output electrically highthrough active devices. The integrated control circuit can be configuredto pull the output electrically high through the active devices when thethere is stimulus applied (for example, a human touch stimulus) or canbe configured to pull the output electrically high through the activedevices when there is a lack of stimulus (for example, no human touchstimulus).

In FIG. 19, output pin PDS_O is electrically coupled to Schotky diodeSD1, which is in turn coupled to output pin PD_O. Output pin PD_O iselectrically coupled to the base of active device Q12 and the drain ofactive device M17, whose source is coupled to voltage signal VDD andwhose gate is coupled to the output of inverter U1 and the input ofinverter U2. The collector of active device Q12 is coupled to theemitter of active device Q11, whose collector and base both are coupledto voltage signal VDD. Also shown in FIG. 19, the emitter of activedevice Q12 is coupled to output pin PE_O.

The integrated control circuit can be applied in conventional DC mode,DC matrix, pulsed DC matrix mode or latch matrix mode. FIG. 20Aillustrates applications where the integrated control circuit is appliedin touch cell configurations for DC mode. In all applications using DCmode, each integrated control circuit is continuously connected tosystem voltage signals VDD and VSS. In some cases, the outputs ofseveral touch cells are connected in electrical OR logic (for example,touch cells TC1-TC3 using PE_O outputs and TC7-TC9 using NE_O outputs).The rest of the touch cells (TC4-TC6 and TC10-TC13) show the use of thevarious outputs, namely, PD_S, PD_O, PD_E, NDB_O, NE_O and ND_O. Fortouch cells TC4-TC6, which can pull electrically high outputs, outputpins are coupled through a resistor to ground, where for touch cellsTC10-TC13, which can pull electrically low outputs, output pins arecoupled through a resistor to voltage signal VDD.

FIG. 20B illustrates the application of touch sensors in negative pulsedDC matrix mode. Each touch cell's integrated control circuit has itsvoltage signal VDD connected to system voltage supply V_(supply). Alsoshown are the VSS connections of each touch cell's integrated controlcircuit to a row select signal, ROW SELECT 1 or ROW SELECT 2. In FIG.20B, output pins NE_O of each touch cell's integrated control circuitconnect to a column return, either COLUMN RETURN 1 (touch sensors TS1and TS2) or COLUMN RETURN 2 (touch sensors TS3 and TS4). As can be seenfrom FIG. 20B, ROW SELECTS and COLUMN RETURNS can activate a singletouch sensor, a row of touch sensors or a column of touch sensors. Thisis also illustrated in the timing diagram of FIG. 20B.

P-type active devices Q13 and Q14, shown in FIG. 19, will pull NE_O lowwhen there is an active stimulus applied to the associated input. Theinput can also be configured such that these P-type active devices onthe output will pull NE_O low when there is no stimulus applied to theassociated input. The emitter base junction of active devices Q13 andQ14 will block current back through VSS to other devices in the matrixwhen any one device goes active low. Whenever any one particular touchcell's integrated control circuit pulls low, there will be a reducedoutput (as measured from V_(supply) to NE_O) to the forward biasedvoltage drop of the base-emitter junction of the output active devicesQ13 and Q14. One device can be used in place of or in lieu of the twoactive devices Q13 and Q14, depending on the application.

When it is desirable to avoid the V_(be) drop of the P-type device ordevices, then the NDB_O or ND_O outputs, which employ MOSFET devices asshown in FIG. 19, can be used. A negative pulsed DC matrix modeconfiguration of touch sensors with ND_O outputs is shown in FIG. 20Cand is substantially similar to that shown in FIG. 10B. The voltage dropacross the N-type MOSFET devices M18 or M20 will be relatively low atlow current levels and is dependent on the RDSon resistance multipliedby the current through the MOSFET device channel. This current willtherefore be predominantly set by the external load resistance. At lowercurrent levels, the voltage drop will be less, relative to thecorresponding voltage drop for P-type bipolar transistors. On the otherhand, at higher current levels the bipolar transistors will tend to dropthe forward bias of the base emitter junction (0.6 to 0.7 volts) whilethe N-type MOSFET devices will tend to have an increased voltage dropowing to the approximate linear relationship of RDSon to drain current:V_(drop)=(RDSon)(I_(drain)). Thus, in typical logic circuits where lowercurrent levels are present, an N-type MOSFET output will tend to dropless voltage than would a bipolar device. This makes MOSFET devices moregenerically appropriate for other logic circuits. FIG. 20D shows apositive pulsed DC matrix configuration with touch sensors having PD_Ooutputs using P-type MOSFET device M17, as shown in FIG. 19, to whichthese observations also apply.

MOSFET devices, however, do not have any inherent blocking features asdo bipolar devices. FIG. 21A illustrates a cross sectional view of atypical P-type substrate with doped N and P type materials used in theconstruction of typical CMOS circuits. FIG. 21B is a schematicrepresentations of an N-type MOSFET device, N1, which can be used as anoutput pull down device for output pin NBD_O (active device M18 in FIG.19) or for output pin ND_O (active device M20 in FIG. 19). FIG. 21C is aschematic representation of a blocking device, N2, connected in serieswith the output device N1 to prevent the development of leakage currentsfrom parasitic devices associated with N1, which can occur as anunintended consequence of MOSFET device construction because of thedepletion regions that surround the device.

FIGS. 21A-21C illustrate how the construction of an N-type MOSFET deviceresults in the creation of a parasitic drain to source bipolar diode PD1and how to block leakage current from VSS to the substrate. Typical CMOSintegrated circuits make use of P or N type substrates. These substratesare typically electrically connected to the integrated circuit VSS orVDD. In the case of P type substrates, the substrate is tied to VSS andin the case of N type substrates, the substrate is tied to VDD. Notethat, in FIG. 21B, the source of N-type MOSFET device N1 is tied tovoltage signal VSS and that the anode of parasitic diode PD1 is alsotied to the source node of device N1. The cathode of parasitic diode PD1is tied to the drain of device N1. As a result of this, when theintegrated control circuit is implemented in negative pulsed DC matrixmode with active electrical pull down, using N-type MOSFET devices (asshown in FIG. 20C, with ND_O outputs), there exists an inherent path forreverse current through parasitic diode PD1 through the P substrate.When the pulses for the strobe rows are applied to the matrix and are ata potential that is greater than the potential at the output of ND_O, acurrent will flow through parasitic diode PD1 from VSS to ND_O. Thiscurrent path will affect the operation of the matrix and the powersupply; and this low current path will provide a low impedance path thatconnects VSS to VDD through the strobe drivers. A bipolar diodeconnected in series with the N-type MOSFET pull down device will preventreverse current flow but would also negate the advantage of the N-typeMOSFET pull down device, namely, low voltage drop at the output. Abipolar diode would also tend to drop the V_(be) of a base emitterjunction. To block this unwanted current path, a way to implement ablocking device is needed that preferably is compatible withconventional integrated circuit manufacturing and has a minimum voltagedrop. By making appropriate connections between the N-type MOSFETdevices N1 and N2, the leakage current path can be blocked such that theP substrate and voltage signal VSS are isolated from leakage paths ofcurrent through the ND_O device N1; at the same time the voltage drop ofthe control circuit output is minimized.

Device N2 in FIG. 21A is the blocking device and is representedschematically in FIG. 21C. The drain and source of blocking device N2are connected to VSS and VSS1, respectively, as shown in FIGS. 21A and21C. The gate of blocking device N2 is coupled to voltage signal VDD,which can, but need not, be 3-5 volts so as to be compatible with mostmicroprocessors. When the source of device N2 is at a low potential,such as ground, the channel resistance will be very low so long as thegate voltage is slightly higher than he threshold voltage of the device.Since the gate of device N2 is at VDD, which can be on the order of 3 to5 volts (V_(supply)), its source is at zero volts during the activepulse period, and its threshold voltage is less than a volt, the channelresistance will be very low and therefore the channel drop of the devicewill also be very low (i.e., less than a standard bipolar diode). Whenthe source of device N2 is at a voltage equal to (or higher than) VDD,the gate to source voltage (VGS) will be less than the threshold voltageof the device. This will cause the channel resistance to increasesignificantly, thereby blocking substantial current through the channel.Also, the voltage across the depletion junction of the source of deviceN2 to parasitic diodes PD of substrate PS will be less than the barrierpotential (about 0.6 to 0.7 volts) of the source-drain parasitic diodePD1. Parasitic diode PD1 will therefore block substantial currentthrough the substrate.

Also, blocking device N2 can be used for reverse voltage protection instandard integrated circuit applications and provide all of the benefitsstated above. When used in this way, blocking device N2 would beconnected to the integrated circuit's VSS in the same way as describedand would protect the circuit from reverse current or voltage damage.

FIGS. 21D-21F depict a blocking device BDP2 for the electrically highpull devices having outputs PDS_O, PD_O and PE_O, shown in FIG. 19. Thedevice depicted in FIGS. 21D-21F is complementary to the device depictedin FIGS. 21A-21C and will be understood by those skilled in the art inlight of the discussion referencing FIGS. 21A-21C. In all DC modeconfigurations described, there are three connections to each touchcell's integrated control circuit. VDD and VSS for each touch cell'sintegrated control circuit need to be connected to a source of power forsome amount of time, in order to process the input stimuli. The outputof the integrated control circuit is found at PDS_O, PD_O, PE_O NDB_O,ND_O, and NE_O, depending on the configuration desired. These outputsform the third connection required by the integrated control circuit. Insome cases, however, it would be advantageous to have an integratedcircuit requiring only two connections. For example, since typicallyonly two connections per switch are used in applications involvingmembrane switches, having a touch sensing switch and integrated controlcircuit requiring only two connections would facilitate directreplacement of the membrane switches with touch switches.

A schematic representation of a matrix of two-terminal membrane switchesMS1-MS4 is shown in FIG. 22. FIG. 22 shows one way to address and readswitches within a matrix. The matrix of FIG. 22 could, of course, alsobe modified to include more rows, more columns, more switches, andalternative connections. In all cases, the interface to each switchtypically would include two types of signal lines: ROW SELECT and COLUMNRETURN. Each ROW SELECT line is a source of potential to allow currentto flow through each switch MS1-MS4 as they are closed (in the case ofmembrane switches, by finger pressure causing closure) through theCOLUMN RETURN lines. The terminating resistors COLR1 and COLR2 on theCOLUMN RETURN lines 1 and 2, respectively, are used to develop thevoltage to be processed by return logic circuits and for limitingcurrent through the switch devices. The strobe lines can be sequenced insuch a manner that only one row of switches (MS1 and MS3 or MS2 and MS4)is active at a given time. When a particular row is selected, thevoltage generated through each terminating resistor COLR will indicatewhich switches on the selected row are electrically closed. The COLUMNRETURN lines are generally processed simultaneously. Matrix schemes areefficient in terms of the number of interconnections used to process thenumber of switch inputs. For example, sixty four switches can be readwith an eight by eight matrix using eight ROW SELECT lines and eightCOLUMN RETURN lines. Typically, some sort of logic device is connectedto the strobe and return lines to determine the status of all theswitches over a short period of time. This is a typical matrix schemethat one skilled in the art would know how to implement. It can be usedin controllers, keyboards for computers, telephones, and other devicesthat are widely available in the market.

A solid-state type sensing device that can detect stimuli and act as atwo-terminal switch could be advantageous in that it would allowconventional matrix strobe and read circuits to be built withoutadditional software, logic circuits, and/or microprocessors, which aresusceptible to resets and other failures. FIG. 23 illustrates theimplementation of such devices, arranged in a matrix and having only twointegrated circuit connections. Thus, the touch sensors TS1-TS4 of FIG.23 have replaced the membrane switches MS1-MS4 of FIG. 22. In FIG. 23,each touch sensor TS1-TS4 senses electric field potential differences.According to the presence or absence of an appropriate stimulus, thedevice (depending on the specific application) will move from a highimpedance state (open switch equivalent) to a low impedance state(closed switch equivalent), thereby mimicking a conventional membrane orother mechanical switch. The chief advantage of these devices is theirability to mimic the attributes of two terminal switches.

FIGS. 24A and 24B show possible circuitry for the touch sensors TS1-TS4of FIG. 23. The circuits depicted in FIGS. 24A and 24B are based on thelatch circuit portion of the circuit depicted in FIG. 19. In FIG. 19,the latch circuit depicted includes active devices M19 and Q15-Q19 aswell a resistor R9. Latch circuit output pin LCH_O is shown coupled tothe emitter of active device Q19. Active device Q19 is in turn coupledat its base to the output of inverter U2, to the drain of active deviceQ15 and the gate of active device M20; and at its collector to theemitter of active device Q18, whose base is coupled to voltage signalVDD and whose collector is coupled to resistor R9, which in turn iscoupled to voltage signal VDD. The collector of active device Q18 isalso shown coupled to the bases of active device Q15 and Q16, theemitters of which are coupled to voltage signal VDD, and the base ofactive device Q17, the collector of which is coupled to voltage signalVSS and the emitter of which is coupled to the collector of activedevice Q15. The collector of active device Q18 is also coupled to thedrain of active device M19, the gate of which is coupled to output pinINITB of the control circuit and the source of which is coupled tovoltage signal VDD.

FIGS. 24A and 24B show various embodiments of the latch circuit of FIG.19. Both of these embodiments omit optional active devices Q16-Q18. FIG.24A shows the implementation of bipolar components Q15 and Q19 in thelatch circuit, as shown in FIG. 19, and FIG. 24B shows theimplementation of MOSFET components in the latch circuit. Otherconfigurations can be implemented in keeping with the spirit andfunctionality of a two terminal device.

FIG. 24A shows a bipolar latch circuit operating in conjunction with acontrol circuit, which provides the functions needed to detect an inputstimulus, make decisions, and trigger the bipolar latch circuit. Thecontrol circuit can also provide for power on reset functions,initializing and sequencing of various internal blocks and features.Inputs into the control circuit include those associated with the inputsensing connections, namely, OSCB, +(PLUS), and −(NEGATIVE); thoseassociated with the power supply of the control circuit, namely, voltagesignals VDD and VSS; and those associated with the latch circuit,namely, INIT and TRIGGER. The latch output is through output pin LCH_O.

When there exists a path for current from a system V_(supply) to GNDthrough the active pull P-type MOSFET device on the ROW SELECT line, thestrobe line ROW SELECT in FIG. 24A is active. With power supplied, thecontrol circuit would be operational. When the strobe pulse is firstapplied, the control circuit would apply a gate signal, via the INITline, to turn on active device M19. This will ensure that the baseemitter voltage of active device Q15 is essentially at zero volts,keeping it from conducting (except for leakage current). With Q15 off,there is no current available for the base of Q19 and, therefore, Q19will also be off. With Q19 off, the voltage at the base of Q15 would beessentially VDD, even after the INIT signal is removed and M19 is off.With the latch essentially off (i.e., no current flow), the controlcircuit will be allowed to operate. When operational, the integratedcontrol circuit is in the high impedance mode and simulates an openswitch. The output voltage developed across resistor R_(column) is equalto V_(supply)×R(integrated control circuit)/([R(integrated controlcircuit)+R_(column)]. The greater the effective resistance of theintegrated control circuit, the less the percentage of V_(supply) thatwill be dropped across R_(column), and the greater the percentage thatwill be dropped across integrated control circuit.

A perfect switch would have infinite resistance and zero current whenopen and therefore V_(supply) would be dropped across the switch duringa strobe pulse and zero voltage would be dropped across R_(column)because of zero current flow. Since an integrated circuit is not aswitch, it is important to design the integrated control circuit to haveas little current as possible when V_(supply) is applied by the strobepulse to more accurately replicate an open switch's characteristics.

An input electrode can be configured to cause the integrated controlcircuit to stay in this high impedance mode with a stimulus applied orwithout a stimulus applied. When the integrated control circuit is inthe high impedance mode, most of V_(supply) will be applied across theintegrated control circuit. This will allow the circuit to operate in afloating mode since the internal VDD and VSS is sufficient to operatethe integrated circuit as a whole and the internal control circuit aswell. The electrode configuration can also be such as to cause thecontrol circuit to generate a trigger pulse to the latch circuit when astimulus is applied or, alternatively, when a stimulus is not applied.When the control circuit generates a trigger pulse, the latch will turnon. The trigger pulse in FIG. 24A would be a positive pulse movingtowards VDD from VSS. This trigger pulse would be allowed after the INITsignal resets, causing M19 to turn off. This positive pulse wouldforward bias the base emitter junction of N-type bipolar device Q19,causing it to turn on. With the flow of base current and the gaintransfer of active device Q19, current will flow at the collector ofactive device Q19 and therefore through resistor R9. The current flowacross resistor R9 will generate a voltage potential that will cause thebase of active device Q15 to drop towards VSS—enough to forward bias theemitter base junction of active device Q15 to cause it to turn on. Thecurrent gain of active device Q15 will cause substantial current to flowat the collector of active device Q15 and will also cause the voltage toincrease at the base of active device Q19 sufficiently to forward biasthe emitter base junction of active device Q19, even after the removalof the trigger pulse. The trigger pulse will be removed, owing to thevoltage drop across the control circuit, sufficiently to disable theoperation of the control circuit. The latch current will stay on afterthe trigger pulse is removed owing to the positive current feedback loopbetween the Q15 and Q19. The voltage drop of the latch will bedetermined by the saturation voltage, the junction resistances, thegains of active devices Q15 and Q19 and the resistance of R_(column).The latch circuit inside the integrated control circuit has to stay ononce the trigger is removed since the control circuit is inoperable andit is important that the latch drop as little voltage as possible acrossa range of currents. In this low impedance mode, it is desirable toobtain these attributes as much as possible to replicate a closedswitch. A perfect closed switch would pass infinite current and dropzero volts at all current levels. To best replicate a perfect switch,e.g., one with a low voltage drop, the latch circuit can preferably makeuse of bipolar transistors with increased emitter areas and low V_(be)drops and MOSFETS with high W/L channel ratios, low thresholds anddevices with high gains.

FIG. 24B shows the latch circuit of FIG. 24A where the bipolar activedevices Q15 and Q19 have been replaced by MOSFET devices M21 and M22.The operation of the integrated control circuit in FIG. 24B parallelsthe operation of the integrated control circuit of FIG. 24A. Theoperation of the latch portion depicted in FIG. 14B is described below.

When the INIT pulse is applied, active device M19 is turned on. Thiswill allow VDD to be applied to the gate of active device M21. In thiscondition, the gate source voltage of active device M21 will be lessthan the threshold voltage of the P-type MOSFET device M21, essentiallyzero volts, and, therefore, active device M21 will be off. With thedrain current of active device M21 at essentially zero amps (other thanleakage current), there will be no voltage developed across resistorR10. With the gate of active device M22 at essentially zero volts, itsgate source voltage will be substantially less than the thresholdvoltage of the device. The drain current of active device M22 will beessentially zero with its gate source voltage well below the thresholdvoltage. The zero current through resistor R9 will cause the voltage onthe gate of active device M21 to be at, or very close to, VDD, and,therefore, the gate source voltage of active device M21 will beessentially zero also, even after the INIT signal is removed. Thiscondition will place the latch circuit in the high impedance state. Whena trigger pulse approaching VDD is applied to the gate of active deviceM22, after removal of the INIT pulse, its gate source voltage willexceed the threshold voltage of active device M22, causing M22 to turnon. The drain current of active device M22 will increase, developing avoltage drop across resistor R9. With voltage drop across resistor R9,the gate source voltage of active device M21 will exceed its thresholdvoltage, causing active device M21 to turn on. The drain current ofactive device M21 will increase also causing the voltage drop acrossresistor R10 to increase above the threshold voltage of active deviceM22, even after the trigger pulse is removed. The latch will thereforemove into a low impedance state and the voltage drop across it will bedependent on the characteristics of active devices M21 and M22, valuesof resistors R9 and R10, and the resistance of R_(column). The rest ofthe operation of the integrated control circuit in FIG. 24B is similarto that of the integrated control circuit of FIG. 24A. Also shown inboth FIGS. are the blocking diodes of FIGS. 21A-21C, labeled D8 and D9in FIGS. 24A and 24B, respectively.

FIG. 25A illustrates the latch circuit portion of FIG. 19 comprisingactive devices Q15-Q19 in a possible configuration built into substratePS. FIG. 25B shows the latch circuit portion schematically. In FIG. 25A,active devices Q15 and Q16 share a P-doped well EMITTERQ15/EMITTERQ16 asan emitter and the collector of active device Q15 and emitter of activedevice Q17 are the same P-doped well COLLECTORQ15/EMITTERQ17, which iscoupled to the gate of active device Q15. Active devices Q15, Q16 andQ17 also share the same N-doped well as their bases BASEQ15, BASEQ16 andBASEQ17, respectively. Substrate PS forms the collectors of activedevices Q16 and Q17, COLLECTORQ16 and COLLECTORQ17, respectively. Activedevice Q19 is shown in a separate N-doped well in substrate PS, and iscoupled at its N-doped well collector COLLECTORQ19 to resistance R9, atits P-doped well base BASEQ19 to P-doped well COLLECTORQ15/EMITTERQ17,and at its N-doped well emitter EMITTERQ19 to voltage signal VSS at theanode of diode D10. In FIG. 25A, active device M19 is coupled inparallel with resistance R9. Operation of the configuration depicted inFIGS. 25A and 25B will be understood by those skilled in the art ofactive device and circuit design and from the discussion of the latchcircuit with reference to FIG. 24A. Active devices Q16-Q18 will enhancethe signal delivered to output LCH_O. The configuration shown in FIG.25A will benefit from a reduced latch ON voltage drop, as compared withthe voltage drop associated with a standard latch, owing to the dynamicimpedance of active device Q17 and the shunting of VSS current throughsubstrate PS. Diode D10, coupled at its cathode to output LCH_O and atits anode to the emitter of active device Q19 and to voltage signal VSS,can prevent feedback into the latch portion of the integrated circuitdepicted in FIG. 25B. FIG. 25C shows diode D10 coupled at it anode tovoltage signal VSS and the collectors of active devices Q17 and Q18 andat its cathode to the emitter of active device Q19 and output LCH_O. Theconfiguration in FIG. 25C thus changes the voltage signal on the emitterof active device Q19, which can be biased on by output TRIG, from VSS,in FIG. 25B, to VSS1. This latch circuit configuration canadvantageously reduce the voltage drop since, in this case, the voltagedrop across diode D10 is not in series with the base emitter voltage ofactive device Q19. Optional active device Q18 in FIGS. 25B and 25C isuseful to increase the reverse breakdown voltage of the latch circuit.

The integrated circuits of the present invention can respond tocapacitive inputs that change in a variety of ways. For example, FIGS.26A-26C show a capacitive input sensing apparatus compatible with theintegrated circuit of the present invention, wherein the capacitiveinput changes as a result of a change in the distance d betweenelectrodes GE and SE that form capacitance C_(sense), shownschematically in FIG. 26D. Capacitance C_(sense) is a function of thecapacitive constant of the electrodes E_(o), relative dielectricconstant E_(r), surface area of the electrodes s and the distancebetween them d. The apparatus depicted in FIG. 26A, having sensorelectrodes SE and integrated control circuit ICC on one side 143 ofsubstrate 144 and grounded electrode GE configured into buttons 122creating cavities 121 on the other side 145. FIGS. 26B and 26B show theseparate layers of the apparatus shown in FIG. 26A. Cavities 121 in FIG.26A allow buttons 122 to be depressed, for instance, by a human fingeror other probe, so as to alter the distance d between electrodes GE andSE. The control circuit depicted in FIG. 26D, can respond to the changedcapacitance that results from the changed distance d. The controlcircuit of FIG. 26D corresponds to the control circuit depicted in FIG.18D, except that capacitance C3 in FIG. 18D has been renamed C_(sense)in FIG. 26D.

Thus far, this specification generally has described various preferredembodiments of touch sensors (or field effect sensors) according to thepresent invention. Following are descriptions of various preferredembodiments of practical applications for such sensors. Although itgenerally is preferred that these applications be practiced using thetouch sensors described above, these applications generally also may bepracticed using other types of touch sensors, for example, the sensorsdescribed in U.S. Pat. Nos. 5,594,222 and 6,310,611, conventionalcapacitive sensors, and other types of sensors, as would be known to oneskilled in the art.

FIGS. 27A-27D show a capacitive input liquid level sensing apparatuscompatible with the integrated circuit of the present invention, whereinthe capacitive input changes as a result of a change in the dielectricconstant E_(r) between two electrodes. This change can occur, forinstance, when liquid replaces air between two electrodes GE and SE1forming capacitance C_(sense). Thus, in FIG. 27A, grounded electrode GEon substrate 123 is separated from sensor electrode SE1 through an airgap that can be filled by liquid 125. FIG. 27B shows substrate 124forming a reservoir for liquid 125 and substrate 123 adapted to allowliquid 125 to fill the air gap between grounded electrode GE and sensorelectrode SE1 when liquid 125 reaches a certain level. FIGS. 27C and 27Dillustrate one possible advantageous configuration of grounded electrodeGE and sensor electrode SE1, coupled to integrated control circuit ICC.In both FIGS. 27C and 27D, electrodes GE and SE1 are long and disposedhorizontally, i.e., with their longitudinal axes parallel with thesurface of liquid 125, such that a small increase in the level of liquid125 will significantly change capacitance C_(sense), shown schematicallyin FIG. 27D. The control circuit shown in FIG. 27E is the same as thatshown in FIG. 26D, and it is equally compatible with the apparatusdepicted in FIG. 27A-27D.

FIGS. 28A-28B show a capacitive input sensing apparatus compatible withthe integrated circuit of the present invention, wherein the capacitiveinput changes as a result of a change in the surface area s_(s3) ofsensor electrode SE3. In FIG. 28A, substrate 126 bears a groundedelectrode GE and movable substrate 127 bears two sensors electrodes SE2and SE3 coupled to integrated control circuit ICC. Sensor electrode SE3has a surface area s_(s2) that varies along the direction in whichsubstrate 127 is adapted to be moved. Thus, FIG. 28B shows substrate 127moved upward relative to its position in FIG. 28A. Surface area s_(s3)of sensor electrode SE3 seen by grounded electrode GE thereforedecreases. This change in surface area corresponds to a change incapacitance C_(sense3), which is shown schematically in FIG. 28C. Thecontrol circuit depicted in FIG. 28C is similar to the circuit depictedin FIG. 18E, but has the dual electrode structure depicted in FIG. 11A,where electrodes E1 and E2 have been renamed sensor electrodes SE2 andSE3 and capacitance C6 has been renamed capacitance C23. The operationof the circuit will be understood by those skilled in the art and fromthe preceding discussion of FIGS. 11A and 18E.

FIGS. 29A-29D show a capacitive input sensing dial apparatus compatiblewith the integrated circuit of the present invention, wherein inputpulse widths and sequence can determine the integrated control circuitresponse. FIGS. 29A-29D show sensor electrode SE4 coupled to integratedcontrol circuit ICC on substrate 128 and grounded electrodes GE1 and GE2on rotating disc 129. In FIGS. 29A-29D, grounded electrodes GE1 and GE2(including the space between them) together occupy only about one halfthe area of rotating disc 129 and are spaced apart. This, and other,similar configurations, can allow a control circuit to distinguishbetween clockwise and counterclockwise rotation of the dial device.FIGS. 29B-29C show the movement of rotating disc 129 relative tostationary substrate 128. FIGS. 29E and 29F show the output pulses ofthe dial apparatus depicted in FIGS. 29A-29D, which can create aresponse in an input portion of an integrated control circuit, as shownin FIG. 29G. FIG. 29E shows the relatively wide and spaced apart inputpulses that result from counterclockwise rotation of rotating disc 129at one speed and FIG. 29F shows the relatively narrow and close inputpulses that result from clockwise rotation of rotating disc 129 at afaster speed. Changes in capacitance C_(sense), formed betweenelectrodes SE4 and either GE1 and GE2 and shown schematically in FIG.29G (which is similar to the configuration shown in FIG. 27E), can bedetected by embodiments of the integrated control circuits of thepresent invention.

FIGS. 30A-30E show another capacitive sensing dial apparatus compatiblewith the integrated circuit of the present invention, wherein a couplingto ground is provided by the user. FIG. 30A shows rotating disc 130having transfer electrodes TE1-TE8 of various sizes, which cancorrespond to input pulse widths of various sizes when they are coupledto ground. FIG. 30B shows the transfer electrodes TE1-TE8 of rotatingdisc 130 coupled to coupling electrode CE borne on cylinder 131. FIG.30C shows cylinder 132, adapted to fit within cylinder 131 of FIG. 30B,having sensor electrodes SE5 and SE6 coupled to integrated controlcircuit ICC. FIG. 30D shows the components depicted in FIGS. 30A-30Cassembled together as a rotary capacitive input device. FIG. 30E showshand 133 grasping cylinder 131. Hand 133 couples coupling electrode CEand transfer electrodes TE1-TE8 to a virtual ground. Each sensorelectrode SE5 and SE6, as shown in FIG. 30C, is adapted to receivecapacitive input from one transfer electrode at a time. As shown inFIGS. 30F-30H, two input pulses can be fed to integrated control circuitICC at a time. Both the direction and arc length of a user's turn of thedial comprising rotating disc 130 and cylinder 131 can be determinedfrom the inputs shown in FIGS. 30F and 30G. FIG. 30F shows the pulsetrain resulting from two full turns of the dial device in acounterclockwise direction, where FIG. 30G shows the pulse trainresulting from two turns in a clockwise direction. FIG. 30H shows aschematic representation of the dial device of FIG. 30E, includinggrounding hand 133, coupling electrode CE connected to transferelectrodes TE, which form a capacitance with sensor electrodes SE5 andSE6, coupled to resistances RIN1 and RIN2, respectively. Integratedcontrol circuit ICC provides oscillating signal OSC to sensor electrodesSE5 and SE6 through resistances RIN1 and RIN2, respectively, andprovides outputs OUT1 and OUT2 to a decision circuit (not shown). Thevarious components of the dial device, including rotating disc 130 andcylinders 131 and 132 can be formed according to the invention describedin U.S. Pat. No. 6,897,390, entitled Molded/Integrated TouchSwitch/Control Panel Assembly and Method for Making Same, or in otherways.

FIGS. 31A-31F show the separate layers and construction of a touchswitch assembly having an integrated control circuit according to thepresent invention. FIGS. 31A-31E show the individual layers of theassembled touch switch depicted in FIG. 31F. FIG. 31A shows the backsideof substrate 133 including opaque area 135 and window area 136. Opaquearea 135 can be decorative frit, decorative epoxy, ultraviolet cured inkor any other decorative layer material. FIG. 31B shows the electrodes134 of the touch switch borne on the backside of substrate 133 at windowarea 136. Electrodes 134 are shown overlapping opaque area 135 and canbe composed of a transparent conductive material including indium tinoxide or other suitable material. FIG. 31C shows the bottom conductivelayer of the touch switch assembly, as viewed from the backside,including circuit traces 138, which can be composed of silver loadedfrit, silver epoxies, copper epoxies, electroplated conductors, and thelike, as well as combinations of the above. FIG. 31D shows thedielectric layer of the touch switch having dielectric layer areas 140,which can be insulated ceramic frits, ultraviolet inks, epoxies and thelike. FIG. 31E shows the crossover layer of the touch switch assembly,as viewed from the backside, including crossover conductors 137, whichcan be composed of the materials described with reference to FIG. 31C.FIG. 31F shows the separate layers depicted in FIGS. 31A-31E assembledtogether as a finished touch switch assembly. FIG. 31F provides a viewfrom the backside of the assembly as well.

While the embodiments depicted above have been described as being in DCmode, the integrated control circuits of the present invention are alsocompatible with AC inputs and can therefore also operate in AC mode. TheAC situation is depicted in FIG. 32. FIG. 32 shows a touch switch withintegrated control circuit adapted to receive an AC input. In FIG. 32,AC signal AC is coupled to rectifier bridge RB, including diodesD11-D14, through resistances R10 and RLOAD. Rectifier bridge RB diodesD11-D14 are coupled in parallel with zener diode Z1 and capacitance C15.AC signal AC can stimulate the touch switch with integrated controlcircuit, including the latch portion shown in FIG. 24A with diode D8removed. This configuration can be advantageous in that the integratedcircuit can be designed to draw relatively little current and in thatthe circuit is characterized by low sensing impedance, which providesfor a floating circuit that is not so ground dependent.

Although the embodiments of the present invention described above havebeen described as providing a digital output, many of the benefits ofthe touch switch with integrated control circuit configurationsdescribed above can also accrue where the integrated control circuitprovides an analog output. In the digital output situation, the outputreflects information provided by input to the electrodes for only twostates, e.g., stimulated or not stimulated. In some applications it isdesirable to provide output that can correspond to more than two states.For example, in liquid sensing applications, similar to the situationdescribed with reference to FIGS. 27A-27D, it can be desirable toprovide output that reflects not two states, but many states that cancorrespond to many liquid levels. An analog output can correspond tomany input states. FIG. 33A shows possible circuitry for an analogelectric field sensor with integrated control circuit. The circuitconfiguration of FIG. 33A corresponds to the circuit depicted in FIG. 4,and includes startup and bias circuit 40 providing a current bias to thegates of switches SW2 and SW4 and pulse generator and logic circuitryproviding a power on reset signal POR to the gates of switches SW1 andSW3. The configuration of FIG. 33A also includes an input portion,including active devices M1, M2, M5 and M6, similar to the input portiondescribed with reference to FIG. 12A. The drains of active devices M1and M2 are coupled to traces INPUT1 and INPUT2 and, through diodes D1and D2 to traces PKOUT1 and PKOUT2, which provide input to differentialamplifying circuit 160. The operation of this circuit can be understoodfrom the description provided with reference to FIGS. 4-7. Theconfiguration depicted in FIG. 33A can provide the benefits of theconfigurations depicted in FIGS. 4-7, including sensor electrode andstrobe signal buffering, common mode rejection of electricalinterference at the electrodes and circuitry, temperature stability andthe like. FIGS. 33B and 33C show timing diagrams for the circuitrydepicted in FIG. 33A. FIGS. 33B and 33C show the oscillating signal OSCand the signals provided on traces IN1, IN2, INPUT1 and INPUT2. FIG. 33Bshows the signals as a function of time in microseconds and FIG. 33Cshows the signals as a function of time in nanoseconds.

FIG. 34 shows a two-by-two matrix of the field sensors of FIG. 33A thataccept analog input and provide analog output. The multiplexed system ofFIG. 34 is similar to that shown in FIG. 10. Trace ROWSELECT1, having asignal provided by control circuit 141, will go high for a time periodin which analog switches ATS1 and ATS3 have power applied to them.Analog outputs AOUT of analog switches ATS1 and ATS3 will provide anoutput, provided to trace COLUMNRETURN1 and fed into analog interfacecircuit 142, that is proportional to the stimulus provided at theelectrodes of analog switches ATS1 and ATS3. These outputs will betemperature stable, exhibit good signal to noise performancecharacteristics owing to the low impedance of the circuitry, and exhibitcommon mode rejection properties, as well. The analog signals could beprocessed in a manner similar to that described in U.S. Pat. No.5,594,222, or using other analog processing techniques as will beunderstood by those skilled in the art of electrical circuit design.

FIGS. 35A-35B illustrate an embodiment 1100 of the present inventionwherein a field effect sensor is used in connection with other structureto emulate a mechanical pushbutton switch. Embodiment 1100 includesdielectric substrate 1102, which can be embodied in any suitable form.Preferably, substrate 1102 is substantially rigid. For example,substrate 1102 can be a conventional printed wiring board or a panel orportion of a larger assembly or component, for example, the door panelor dashboard of an automobile or an interior panel of a refrigerator.Alternatively, substrate 1102 can be a flexible circuit carrier. In suchan embodiment, the flexible circuit carrier preferably is applied to asubstantially rigid secondary substrate (not shown). Substrate 1102 cantake any other suitable form, as would be recognized by one skilled inthe art.

Substrate 1102 defines aperture 1104. Field effect sensor 1106A isdisposed on substrate 1102, in proximity to aperture 1104. Field effectsensor 1106A is shown in FIG. 35A as disposed on one side of substrate1102. Alternatively, field effect sensor 1106A could be disposed on theother side of substrate 1102. Further, in embodiments where field effectsensor 11 06A includes two or more electrodes, one or more suchelectrodes can be disposed on one side of substrate 1102 and the otherelectrode(s) can be disposed on the other side of substrate 1102. Inother embodiments, field effect sensor 1106A can be encapsulated withinsubstrate 1102, as shown with respect to field effect sensor 1106E inFIG. 1D, discussed further below.

Shaft 1108 is inserted in sliding engagement through aperture 1104. Asleeve, bushing, or the like (not shown) can be provided in connectionwith aperture 1104 to better enable shaft 1108 to slide through aperture1104 without wobbling. Shaft 1108 preferably includes knob 1110. In theillustrated embodiment, shaft 1108 is a threaded plastic bolt, the headof which forms knob 1110. In other embodiments, shaft 1108 can take anysuitable form and can be made of any suitable material, as would berecognized by one skilled in the art. Preferably, shaft 1108 is made ofa non-conductive material, such as plastic or resin.

Electric field stimulator 1112 is attached to shaft 1108 at apredetermined location. Electric field stimulator 1112 is made of amaterial that readily stimulates or disturbs an electric field, asdiscussed above. Preferably, electric field stimulator 1112 is made ofmetal or other conductive material, but other materials are suitable aswell, as would be known to one skilled in the art. In the FIG. 35Aembodiment, electric field stimulator 1112 is a metal washer secured toshaft 1108 with a threaded plastic washers 1116 on each side of electricfield stimulator 1112. In other embodiments, electric field stimulator1112 can take other forms, be made of other materials, and be attachedto shaft 1108 by any suitable means, as would be known to one skilled inthe art.

Plastic washer 1116 installed between substrate 1102 and electric fieldstimulator 1112 preferably is sufficiently thick to prevent electricfield stimulator 1112 from contacting the electrode(s) of field effectsensor 1106A. Alternatively, other structures (not shown) can beprovided to prevent electric field stimulator 1112 from making contactwith the electrode(s) of field effect sensor 1106A, as would be known toone skilled in the art.

FIG. 35A shows electric field stimulator 1112 located on the same sideof substrate 1102 as field effect sensor 1106A and on the opposite sideof substrate 1102 as head 1110. Alternatively, electric field stimulator1112 and field effect sensor 11 06A can be located on opposite sides ofsubstrate 1102, and electric field stimulator 1112 and head 1110 can belocated on the same side of substrate 1102.

Shaft 1108 is biased longitudinally so that electric field stimulator1112 normally is in a predetermined position relative to field effectsensor 1106A. Shaft 1108 and, therefore, electric field stimulator 1112,can be displaced from their normal positions by applying an appropriateforce to head 1110. In the FIG. 35A embodiment, biasing is provided bycoil spring 1114 installed about shaft 1108 between knob 1110 and acorresponding surface of substrate 1102, such that electric fieldstimulator 1112 is normally near field effect sensor 1106A. Electricfield stimulator 1112 is displaced away from field effect sensor 1106Awhen a longitudinal force is applied to shaft 1108. In alternativeembodiments, shaft 1108 can be biased so that electric field stimulator1112 normally is distant from field effect sensor 1106A and is displacednearer field effect sensor 1106A when a suitable force is applied toshaft 1108, as would be recognized by one skilled in the art. In furtheralternative embodiments, coil spring 1114 can be replaced with anysuitable structure for biasing shaft 1108. For example, a layer offlexible and/or resilient material (not shown) might be disposed onsubstrate 1102 about aperture 1104, or substrate 1102 itself might becomprised of a flexible and/or resilient material that deforms when knob1110 is pressed against it and returns to its original position whenreleased, thus returning knob 1110, shaft 1108 and electric fieldstimulator 1112 to their original positions. Any number of otherstructures can be used to bias shaft 1108, as would be known to oneskilled in the art

In operation, an electric field is generated about field effect sensor1106A, as discussed above. With shaft 1108 in the normal position asshown in FIG. 35A, electric field stimulator 1112 is coupled to thiselectric field. Detection circuitry (not shown) associated with fieldeffect sensor 1106A detects this coupling, as discussed above. Whenshaft 1108 is displaced longitudinally in response to, for example, auser pressing down on knob 1110, electric field stimulator 1112 movesaway from field effect sensor 1106A and decouples from the electricfield about field effect sensor 1106A. The corresponding detectioncircuitry (not shown) detects this decoupling and provides a signal to acontrol circuit, which, in turn, can provide a control signal to acontrolled device, as discussed above. In this manner, embodiment 1100emulates a mechanical pushbutton switch.

FIG. 35C illustrates an alternate embodiment 1140 of the presentinvention emulating a mechanical pull switch. Embodiment 1140 isstructurally similar to embodiment 1100, except that shaft 1108 isbiased so that electric field stimulator 1112 normally is positioned ata predetermined distance from field effect sensor 1106A. As such,electric field stimulator 1112 normally is decoupled from the electricfield about field effect sensor 1106A. In order to actuate field effectsensor 1106A, a user would pull on knob 1110, thus drawing electricfield stimulator 1112 near field effect sensor 1106A and causingelectric field stimulator 1112 to couple with the electric field aboutfield effect sensor 1106A. Preferably, a mechanical stop, for example,mechanical stop 1119 attached to shaft 1108 at a predetermined location,is provided to limit the travel of shaft 1108 by coil spring 1114 orother biasing means.

FIG. 35D illustrates another alternate embodiment 1160 of the presentinvention emulating a mechanical pushbutton switch. Embodiment 1160includes post 1118 disposed on substrate 1102. Field effect sensor 1106Eis encapsulated within substrate 1102 in proximity to post 1118. Inother embodiments, field effect sensor 1106E can be disposed on eithersurface of substrate 1102 in the manner of field effect sensor 1106A, asillustrated in and discussed in connection with FIG. 35A.

Push button 1120 having a bearing surface 1122 is slidingly engaged withpost 1118. Electric field stimulator 1112 is associated with a lowerportion of push button 1120 nearest substrate 1102. Push button 1120 andelectric field stimulator 1112 can, but need not be, separatestructures. Indeed, push button 1120 and electric field stimulator 1112can be embodied as a single, monolithic structure.

Coil spring 1114 biases push button 1120 so that field effect stimulator1112 normally is located at a predetermined distance from field effectsensor 1106E. Application of an appropriate force to bearing surface1122 displaces field effect stimulator 1112 toward field effect sensor1106E. Field effect sensor 1106E and the associated detection circuitryrespond as discussed above. Significantly, this embodiment 1160 does notinclude an aperture in substrate 1102. As such, embodiment 1160 may beparticularly preferable for use in applications where it is desirable topreclude intrusion of fluids or contaminants through substrate 1102.Embodiment 1160 readily could be modified to function as a pull switch,as would be recognized by one skilled in the art.

More than one field effect sensor can be used in connection with any ofthe foregoing embodiments. FIG. 35E illustrates an embodiment using fourfield effect sensors 1106A-1106D arranged about aperture 1104 ofembodiments 1100 and 1140. Embodiment 1160 could be similarly modified.Other embodiments could use more or fewer than four field effectssensors.

In embodiments using plural field effect sensors 1106A-1106 n, thesensors and corresponding detection and control circuits can beconfigured so that electric field stimulator 1112 couples to ordecouples from the electric field or fields about each individual fieldeffect sensor 1106 i substantially simultaneously as electric fieldstimulator 1112 is moved toward or away from the field effect sensors1106A-1106 n. Alternatively, such embodiments can be configured(through, for example, sensor and/or stimulator geometry) so thatelectric field stimulator 1112 couples to or decouples from the electricfield or fields about each field effect sensor 1106 i as electric fieldstimulator 1112 reaches different points in its travel toward or awayfrom field effect sensors 1106A-1106 n.

Other modifications to the foregoing embodiments are possible. Forexample, the biasing means could be omitted from any of the foregoingembodiments so that shaft 1108 or push button 1120 remain in the lastposition in which placed by a user. Also, while shaft 1108 and post 1118are shown as substantially perpendicular to substrate 1102, shaft 1108and post 1118 could be configured at other angles to substrate 1102, aswould be known to one skilled in the art.

FIGS. 36A-36B illustrate an embodiment 1200 of the present inventionemulating a mechanical toggle switch. Embodiment 1200 includes substrate1202 defining aperture 1204. Field effect sensor 1206A is disposed onsubstrate 1202 in proximity to aperture 1204. Shaft 1208 extends throughand is pivotally connected to substrate 1202 at aperture 1204. Shaft1208 can, but need not, include knob 1210. A bearing (not shown), forexample, a cylindrical or spherical bearing, or other means (not shown)can be provided at aperture 1204 to provide support for and/or restrictthe degree and direction of movement of shaft 1208. For example, in anembodiment intended for use as a simple on-off switch, it might bedesirable to restrict shaft 1208 so that it can be moved only in asingle plane, for example, to the left and right in the FIG. 36Aembodiment.

Electric field stimulator 1212 is attached to shaft 1208 at apredetermined location, as discussed above in connection with embodiment1100. In the FIGS. 36A-36B embodiment, coil spring 1214 is insertedbetween head 1210 and substrate 1202, biasing shaft 1208 to a centeredposition where shaft 1208 is substantially perpendicular to substrate1202. In other embodiments, other means can be used to bias shaft 1208to a centered position or another desired position, as would berecognized by one skilled in the art. Alternatively, such biasing meanscan be omitted so that shaft 1208 normally rests in the last position towhich it was moved.

In operation, an electric field is generated about field effect sensor1206A, as discussed above. With shaft 1208 in the centered position,electric field stimulator 1212 is sufficiently removed from thiselectric field so that electric field stimulator 1212 does not disturbthis electric field. When shaft 1208 is displaced, for example, by auser applying a perpendicular force to shaft 1208, electric fieldstimulator 1212 is displaced so that at least a portion of electricfield stimulator 1212 moves closer to field effect sensor 1206A, thusdisturbing the electric field about field effect sensor 1206A. Detectioncircuitry associated with field effect sensor 1206A detects thisdisturbance and, in turn, sends an output signal to correspondingcontrol circuitry, as discussed above.

Embodiment 1200 can be readily modified to yield a combinationtoggle/pushbutton embodiment (not shown) by adapting the connectionbetween shaft 1208 and aperture 1204 such that shaft 1208 can bothtoggle about and slide through aperture 1204, as would be understood byone skilled in the art.

FIG. 36C illustrates an alternate embodiment including four field effectsensors 1206A-1206D located in proximity to aperture 1204 and spacedfrom each other about aperture 1204 at 90° intervals. Each field effectsensor 1206A-1206D includes corresponding field generation and detectioncircuitry. A particular field effect sensor 1206 i is actuated when, inresponse to toggling of shaft 1208, electric field stimulator 1212 comessufficiently close to such field effect sensor 1206 i as to disturb theelectric field about field effect sensor 1206 i. Typically, only onefield effect sensor 1206 i is actuated at any time. However, fieldeffect sensors 1206A-1206D (and their corresponding field generation anddetection circuits) can be adapted so that two (or more) adjacent fieldeffect sensors 1206 i are simultaneously actuated when electric fieldstimulator 1212 is positioned near them. For example, in the FIG. 36Cembodiment, electric field stimulator 1212 could couple to both fieldeffect sensors 1206A and 1206B when shaft 1208 is toggled in a mannerthat positions at least a portion of electric field stimulator 1212between field effect sensors 1206A and 1206B. In alternate embodiments,more or fewer than four field effect sensors can be arranged onsubstrate 1202 about aperture 1204 in any desired arrangement, as wouldbe recognized by one skilled in the art.

FIG. 36D illustrates another embodiment 1240 of the present inventionemulating a mechanical toggle switch. Embodiment 1240 includes shaft1208 connected to substrate 1202 at pivot point 1224. In thisembodiment, shaft 208 does not penetrate substrate 1202. Electric fieldstimulator 1212 is attached to shaft 1208 at a predetermined distancefrom pivot point 1224. Biasing means (not shown) can be provided to biasshaft 1208 to any desired position.

FIGS. 37A-37D illustrate an embodiment 1300 of the present inventionemulating a mechanical rotary switch. Substrate 1302 defines aperture1304. Inner field effect sensor 1306A and outer field effect sensor1306B are disposed on a surface of substrate 1302 at first and secondpredetermined distances, respectively, from aperture 1304. Shaft 1308 isinserted through and free to rotate within aperture 1304. A bushing,bearing, or other means (not shown) can be provided to better enableshaft 1308 to rotate within aperture 1304 and preclude shaft 1308 fromsliding through aperture 1304. Preferably, shaft 1308 includes knob 1310to facilitate grasping and rotation of shaft 1308 by a user.

Electric field stimulator mounting plate 1330 is attached to shaft 1308at a predetermined distance from substrate 1302 by any suitable means,as would be known to one skilled in the art. Inner electric fieldstimulators 1332 are mounted on electric field stimulator mounting plate1330 in an annular arrangement at a predetermined distance from thecenter of electric field stimulator mounting plate 1330. Thispredetermined distance corresponds to and preferably is equal to thepredetermined distance from the center of aperture 1304 to inner fieldeffect sensor 1306A. Similarly, outer electric field stimulators 1334are mounted on electric field stimulator mounting plate 1330 in anannular arrangement at a predetermined distance from the center ofelectric field stimulator mounting plate 1330 corresponding to andpreferably equal to the predetermined distance from the center ofaperture 1304 to outer field effect sensor 1306B. Preferably, theangular spacing between adjacent inner electric field stimulators 1332is equal. Similarly, the angular spacing between adjacent outer electricfield stimulators 1334 also preferably is equal.

In operation, a user rotates knob 1310, in turn rotating shaft 1308 andelectric field stimulator mounting plate 1330. As electric fieldstimulator mounting plate 1330 rotates, each inner electric fieldstimulator 1332 alternately couples with and decouples from the electricfield about inner field effect sensor 1306A. Similarly, each outerelectric field stimulator 1334 alternately couples with and decouplesfrom the electric field about outer field effect sensor 1306BA.Detection circuits associated with field effect sensors 1306A, 1306Bdetect this coupling and decoupling and provide corresponding outputsignals to a control circuit (not shown). The control circuit can beadapted to recognize the degree and rate of rotation of knob 1310 basedon these signals.

Preferably, inner electric field stimulators 1332 are neither radiallyaligned with nor angularly centered between adjacent outer electricfield stimulators 1334. As such, inner electric field stimulators 1332will couple to and decouple from the electric field about inner fieldeffect sensor 1306A at certain angular displacements of knob 1310 andouter electric field stimulators 1334 will couple to and decouple fromthe electric field about outer field effect sensor 1306B at differentangular displacements of knob 1310. FIG. 37E illustrates typical streamsof output signals from the detection circuits associated with fieldeffect sensors 1306A,1306B as knob 1310 is turned in a particulardirection. Based on these signals, a microprocessor can determinewhether knob 1310 is being turned clockwise or counterclockwise, aswould be recognized by one skilled in the art.

In alternate embodiments, one of inner field effect sensor 1306A andouter field effect sensor 1306B can be omitted. In such embodiments, thecorresponding inner electric field stimulators 1332 or outer electricfield stimulators 1334 preferably also would be omitted.

In other alternate embodiments, shaft 1308 can be adapted to slidelongitudinally through, as well as rotate within, aperture 1304, andmeans can be provided to bias shaft 1308 longitudinally, as discussedabove in connection with the mechanical pushbutton switch emulationembodiments, thus yielding a combination rotary/push and/or pull switchemulation embodiment. Such embodiments can include one or moreadditional field effect sensors and/or electric field stimulators tofacilitate such push and/or pull switch functionality, as would beunderstood by one skilled in the art.

FIG. 37F illustrates an alternate rotary switch emulation embodiment1350 of the present invention. Embodiment 1350 includes a secondsubstrate 1340 in predetermined spatial relationship with substrate1302. Second inner and outer field effect sensors 1306C,1306D aredisposed on second substrate 1340. Second inner and outer electric fieldstimulators 1342,1344 are disposed on a second surface of electric fieldstimulator mounting plate 1330, opposite the surface on which inner andouter electric field stimulators 1332,1334 are disposed. Shaft 1308 isfree to slide through, as well as rotate within, aperture 1304.

FIG. 37F illustrates electric field stimulator mounting plate 1330 in afirst position where inner and outer electric field stimulators1332,1334 are in relatively close proximity to substrate 1302 (and,therefore, the annuli in which inner and outer field effect sensors1306A, 1306B are located) and second inner and outer electric fieldstimulators 1342,1344 are relatively far from second substrate 1340. Inthis position, rotation of knob 1310 causes inner and outer electricfield stimulators 1332,1334 to alternately couple to and decouple fromthe electric fields about inner and outer field effect sensors1306A,1306B, respectively. In this position, second inner and outerelectric field stimulators 1332,1334 remain sufficiently far from secondinner and outer field effect sensors 1306C,1306D so that second innerand outer electric field stimulators 1342,1344 do not couple to anddecouple from the electric fields about respective field effect sensors1306C,1306D.

By pressing on knob 1310, a user can displace electric field stimulatormounting plate 1330 to a second position where inner and outer electricfield stimulators 1332,1334 are relatively far from substrate 1302 andsecond inner and outer electric field stimulators 1332,1334 are inrelatively close proximity to second substrate 1340 (and, therefore, theannuli in which second inner and outer field effect sensors 1306C,1306Dare located). In this position, rotation of knob 1310 causes secondinner and outer electric field stimulators 1342,1344 to alternatelycouple to and decouple from the electric fields about second inner andouter field effect sensors 1306C,1306D, respectively. In this position,inner and outer electric field stimulators 1332,1334 remain sufficientlyfar from inner and outer field effect sensors 1306A,1306B so that innerand outer field effect sensors 1306A,1306B do not couple to and decouplefrom the electric fields about respective field effect sensors1306A,1306B.

Coil spring 1314 can be provided to-bias electric field stimulatormounting plate 1330 to a “normal” position, as illustrated in FIG. 37F.In other embodiments, electric field stimulator mounting plate 1330 canbe biased to a different “normal” position. In further embodiments, coilspring 1314 can be omitted, so that electric field stimulator mountingplate 1330 remains in any desired position between substrate 1302 andsecond substrate 1340. Further, embodiment 1350 can be adapted so thatboth sets of inner and outer electric field stimulators 1332,1334 and1342,1344 can couple to the electric fields about respective fieldeffect sensors 1306A,1306B,1306C,1306D when electric field stimulatormounting plate 1330 is positioned substantially midway between substrate1302 and second substrate 1340. Alternatively, embodiment 1350 can beadapted so that no electric field stimulator can couple to itsrespective field effect sensor when electric field stimulator mountingplate is so positioned.

All of the foregoing embodiments are suitable for use in connection withanalog or digital detection and control circuitry, as would beunderstood by one skilled in the art. FIG. 37G illustrates an alternateembodiment 1360 of the present invention emulating a mechanical rotaryswitch that is particularly well-suited for use in connection withanalog detection and control circuitry. Embodiment 1360 includessubstrate 1302 defining aperture 1304. Field effect sensor 1306 isdisposed on substrate 1302 in proximity to aperture 1304. Shaft 1308 isinserted through and free to rotate within aperture 1304. In theillustrated embodiment, shaft 1308 is fixed longitudinally. In otherembodiments, shaft 1308 can be adapted to slide through aperture 1304.Shaft 1308 preferably includes knob 1310 at one end. Electric fieldstimulator 1328 is attached to shaft 1308 at a predetermined distancefrom substrate 1302. Electric field stimulator 1328 preferably istapered like a propeller blade so that the distance between field effectsensor 1306 and electric field stimulator 1328 varies with rotation ofknob 1310 and shaft 1308. Alternatively, electric field stimulator 1328could be substantially planar and parallel to substrate 1302, and havinga width or thickness that varies with distance from shaft 1308, asillustrated in FIG. 371. As such, the degree of coupling of electricfield stimulator 1328 with the electric field about field effect sensor1306 varies with rotation of knob 1310 as a function of the distancebetween electric field stimulator 1328 and field effect sensor 1306and/or the effective area of electric field stimulator 1328 in proximityto field effect sensor 1306. Through use of appropriate analog detectionand control circuitry, embodiment 1360 could emulate, for example, apotentiometer.

FIG. 37H illustrates another alternate embodiment 1380 of the presentinvention that is particularly well-suited for use in connection withanalog detection and control circuitry. Embodiment 1380 includessubstrate 1302 defining aperture 1304 having internal threads 1305.Field effect sensor 1306 is disposed on substrate 1302 in proximity toaperture 1304. Threaded shaft 1308 having knob 1310 at one end isscrewed into aperture 1304. Electric field stimulator 1312 is attachedto shaft 1308 at a predetermined location. As knob 1310 is rotatedclockwise, electric field stimulator 1312 moves farther away from fieldeffect sensor 1306. Conversely, as knob 1310 is rotatedcounter-clockwise, electric field stimulator 1312 moves closer to fieldeffect sensor 1306. As such, rotation of knob 1310 affectively changesthe coupling between electric field stimulator 1312 and field effectsensor 1306. These coupling changes readily can be detected andprocessed by analog detection and control circuitry, as would be knownto one skilled in the art.

FIGS. 38A-38D illustrate yet another embodiment 1400 of the presentinvention emulating a rotary switch. Embodiment 1400 includes substrate1402. Inner and outer knobs 1450,1452 are attached to substrate 1402 byany suitable means such that each knob 1450,1452 can rotate about anaxis substantially perpendicular to substrate 1402, as would berecognized by one skilled in the art. One or more electric fieldstimulators 1412 are disposed in the base of each of inner and outerknobs 1450,1452. Inner and outer field effect sensors 1406A,1406B aredisposed on substrate 1402 substantially in alignment with electricfield stimulators 1412 disposed in respective inner and outer knobs1450,1452 so that each electric field stimulator 1412 alternatelycouples to and decouples from the electric field about respective fieldeffect sensor 1406A,1406B upon rotation of respective inner or outerknob 1450,1452. Electric field stimulators 1412 can be embodied invarious ways. For example, each electric field stimulator 1412 could bea conductive mass 1413, for example, a ball bearing, set into the bottomof respective knob 1450,1452. Alternatively, each electric fieldstimulator 1412 could be a bump 1417 in a ring 1415 inset into thebottom of respective knob 1450,1452, as shown in FIG. 38D. In apreferred embodiment, ring 1415 is made of beryllium copper havingstamped bumps 1517.

FIGS. 39A-39B illustrate an alternate embodiment 1500 of the presentinvention emulating a rotary switch. This embodiment is particularlywell-suited for angular position sensing applications. These embodimentuses a single field effect sensor with multiple sensing electrodes. Thisembodiment includes substrate 1502 onto which are disposed in agenerally circular arrangement detection 1503 and a string of sensingelectrodes 1505A-1505H interspersed with resistors R1-R7. In alternateembodiments, detection circuit 1503 can be located remotely and more orfewer sensing electrodes and resistors than shown can be used.

Knob 1510 is connected to substrate 1502 such that knob 1510 can rotateabout an axis substantially perpendicular to substrate 1502. In the FIG.39A embodiment, shaft 1508 is inserted into and free to rotate withinaperture 1504 defined by substrate 1502, and knob 1510 is fixed to shaft1508. In other embodiments, shaft 1508 could be fixed to substrate 1502and knob 1510 could rotate about shaft 1508. Field effect stimulator1512 is embedded within or otherwise associated with knob 1510 such thatfield effect stimulator 1512 rotates with knob 1510 through an arc thatsubstantially corresponds to the circular arrangement in whichelectrodes 1505A-1505H and resistors R1-R7 are disposed on substrate1502.

In operation, as a user rotates knob 1510, electric field stimulator1512 alternately couples to and decouples from the electric fields aboutcorresponding electrodes 1505A-1505H. Analog detection circuitry couldbe adapted to determine the extent, rate, and direction of rotation ofknob 1510, as would be understood by one skilled in the art. In apreferred embodiment, detection circuit 1503 can take the form shown inFIG. 33A, with electrodes 1505A and 1505H of the FIG. 39A embodimenttaking the place of electrodes E2 and E1, respectively, shown in FIG.33A. The strengths of the signals at the (+) and (−) inputs, and,therefore, the output of, summer 160 will have unique, predeterminedvalues for each position of electric field stimulator 1512 with respectto electrodes 1505A-1505H, as would be recognized by one skilled in theart. (A detection circuit of the form shown in FIG. 33A also could beused to detect variations in distance between two conductive sheets, aswould be recognized by one skilled in the art. As such, the FIG. 33Adetection circuit could be used in connection with a pair of conductivesheets arranged as a vibration sensor, sound pressure sensor, airpressure sensor, position sensor, and the like. In certain embodiments,a layer of conductive foam could be disposed between the conductivesheets.)

Conductor 1507 having varying impedance over its length, as shown inFIG. 39B, can be used in place of the electrode-resistor string shown inFIG. 39A. The continuously varying impedance of conductor 1507 providesa continuously varying output to detection circuit 1503 as field effectstimulator 1512 changes position in response to rotation of knob 15 10.As such, use of conductor 1507 might be preferred where fine resolutionof, for example, angular position is required.

The FIGS. 39A-39B embodiment can easily be adapted for use as an angularposition sensor, as would be recognized y one skilled in the art. Theprinciples of the FIGS. 39A-39B embodiment can easily be adapted toprovide a slide switch or slide potentiometer by simply arranging fieldeffect sensors 1505A-1505H and resistors R1-R7 linearly and replacingknob 1510 with a slide, as shown in, for example, FIG. 42A. Theseprinciples can be further extended to detect position of a stimulus inan x-y array by creating an array of detection circuit andelectrode-resistor strings, as shown FIG. 42E.

FIG. 40 illustrates yet another embodiment 1600 of the inventionemulating a rotary switch. Embodiment 1600 includes substrate 1602 andshaft 1608 having a outer knob 1610 and inner knob 1611. Substrate 1602is formed, for example, by molding, to capture inner knob 1611 andencapsulate field effect sensor 1606. Electric field coupling element1612 is encapsulated or otherwise embedded within outer knob 1610.Alternatively, electric field coupling element 1612 could beencapsulated or otherwise embedded within inner knob 1611. Lightemitting device 1621 can be encapsulated within substrate 1602. Byselecting transparent or translucent materials for at least portions ofsubstrate 1602, inner and outer knobs 1610,1611, and shaft 1608, lightemitting deice 1621 can be used to selectively illuminate at least aportion of outer knob 1610.

FIG. 41A illustrates an embodiment 1700 of the present inventionemulating a mechanical rocker switch. Embodiment 1700 includes asubstrate 1702, two field effect sensors 1706A,1706B disposed on asurface of substrate 1702, and electric field stimulators 1713A,1713B inthe form of rocker 1713 attached to substrate 1702. In the illustratedembodiment, rocker 1713 is a piece of curved spring steel fixed tosubstrate 1702, and electric field stimulators 1713A,1713B aremonolithic portions of rocker 1713. In alternate embodiments, rocker1713 can be made of other materials and take other forms, and electricfield stimulators 1713A,1713B could be separate elements, for example,ball bearings, embedded within rocker 1713, as would be recognized byone skilled in the art.

In operation, a user depresses either electric field stimulator 1713Acorresponding to the left side of rocker 1713 or electric fieldstimulator 1713B corresponding to the right side of rocker 1713 towardsubstrate 1702. As electric field stimulator 1713A,1713B approaches orcontacts substrate 1702, electric field stimulator 1713A,1713B couplesto corresponding field effect sensor 1706A,1706B. In the illustratedembodiment, both electric field stimulators 1713A,1713B could be movedtoward substrate 1702 at the same time. Preferably, rocker 1713 isconfigured so that only one of electric field stimulators 1713A,1713Bcan be moved toward substrate 1702 at any time.

FIG. 41B illustrates another embodiment 1750 of the present inventionemulating a mechanical rocker switch. Embodiment 1750 is similar toembodiment 1700, except that embodiment 1750 uses a rigid rocker 1713.In certain embodiments, rocker 1713 might be made of a material thatdoes not provide sufficient coupling to field effect sensors 1706A,1706Bwhen depressed. In such embodiments, conductive masses 1715 can beembedded at appropriate locations in rocker 1713 to enhance suchcoupling, as would be recognized by one skilled in the art. In otherembodiments, rocker 1713 can be shaped and sized so that a user's fingeron rocker 1713 provides coupling to the electric field about fieldeffect sensor 1706A,1706B when the user presses the correspondingportion of rocker 1713 towards substrate 1702.

Biasing means can be provided to bias rocker 1713 to a predetermined“normal” position. In FIG. 41B, the biasing means is embodied as a pairof plastic tabs 1725 attached to substrate 1702. Plastic tabs 1725 aresufficiently flexible to deflect when rocker 1713 is pressed, andsufficiently resilient to return rocker 1713 to the “normal” positionwhen rocker 1713 is released. Any other suitable biasing means could beused, as would be recognized by one skilled in the art.

Alternatively, as illustrated in FIG. 41C, rocker 1713 and tabs can beadapted to secure rocker 1713 in a particular position untilrepositioned by a user. In such an embodiment, tabs 1725 preferablyinclude nubs 1725 projecting toward the ends of rocker 1713 and rocker1713 preferably includes concavities 1727 at its ends for receiving nubs1725.

FIG. 42A illustrates an embodiment 1800 of the present inventionemulating a mechanical slide switch. Embodiment 1800 includes substrate1802. One or more field effect sensors 1806 are disposed on substrate1802. Electric field stimulator 1812, for example, a conductive cylinderor ball bearing, is attached to slide 1811. Slide 1811 engages withrails 1803 attached to substrate 1802. In operation, a user slides slide1811 back and forth along substrate 1802. As electric field stimulator1812 comes into proximity with a particular field effect sensor 1806,electric field stimulator 1812 couples to the electric field about suchfield effect sensor 1806. Likewise, when electric field stimulator 1812is moved away from a particular field effect sensor 1806, electric fieldstimulator 1812 decouples from the electric field about such fieldeffect sensor 1806.

In an alternate embodiment, slide 1811 can be replaced with slide 1817having a cutout 1819 designed to accommodate a user's finger. In thisembodiment, the user's finger functions as electric field stimulator1812. In a further alternate embodiment, slide 1811 can be eliminatedaltogether. The same principles can be applied to a rotary switchemulation by arranging field effect sensors 1806 about the periphery ofa cylinder (not shown) or frustum of a cone 1807, as illustrated in FIG.42D.

In certain embodiments, portions of slide 1811 can be illuminated. Suchembodiments preferably include light pipe 1821 and a light source (notshown) for illuminating light pipe 1821 in connection with substrate1802, such that light channel 1823 disposed on slide 1811 can receivelight from light pipe 1821. In other embodiments, other means can beused to illuminate slide 1811 or portions thereof.

FIG. 42B illustrates another embodiment 1850 of the present inventionemulating a slide switch. Embodiment 1850 is similar to embodiment 1800,except that embodiment eliminates slider 1811 altogether. Flexible sheet1827 under rails 1803 so as to overlay substrate 1802. Preferably, sheet1827 is easily replaceable and can include graphics indicating, forexample, the location of field effect sensors (not shown) disposed onsubstrate 1802 beneath sheet 1827. Normally, an air gap exists betweensheet 1827 and a field effect sensor (not shown) disposed on substrate1802 beneath sheet 1827. When a user touches sheet 1827 to actuate suchfield effect sensor, the air is displaced from this air gap, allowingand enhancing coupling of the user's finger to the electric field aboutthe field effect sensor.

FIG. 42C illustrates an alternate embodiment 1860 of the presentinvention emulating a slide switch. Field effect sensor 1806 is disposedon substrate 1802. Substrate 1802 includes rails 1803. Slide 1811 isslidingly engaged with substrate 1802 via rails 1803. Electric fieldstimulator 1812 preferably is a conductive mass disposed on slide 1811.In the FIG. 41C embodiment, the cross sectional area of electric fieldstimulator 1812 varies from one end of slide 1811 to the other. Withslide 1811 in the position shown in FIG. 42C, electric field stimulator1812 is distant from field effect sensor 1806 and does not couple to theelectric field about field effect sensor 1806. As slide 1811 is moved tothe right by, for example, a user's finger, electric field stimulatoreventually moves sufficiently close to field effect sensor 1806 tocouple to the electric field about field effect sensor 1806. Initially,such coupling is small due to the small area of electric fieldstimulator 1812 that is in proximity to field effect sensor 1806 and thecorresponding electric field. As slide 1811 is moved farther to theright, a greater portion of electric field stimulator 1812 comes intoproximity with field effect sensor 1806 and the corresponding electricfield and the coupling of electric field stimulator 1812 to the electricfield increases. Analog detection circuitry can discern the varyingstate of coupling and provide a corresponding analog output to acorresponding control circuit. Biasing means, for example, coil spring1814, can be provided to maintain slide 1811 in a “normal” position inthe absence of a force displacing slide 1811 from such “normal”position.

FIG. 43 illustrates an embodiment 1900 of the present inventionemulating a mechanical spherical switch or track ball. Embodiment 1900includes a substrate 1902 forming a housing 1962 for ball 1960. One ormore field effect sensors 1906 are arranged on the surface or embeddedwithin substrate 1902. The perimeter of ball 1960 includes electricfield stimulators 1912 arranged in a unique, non-repetitive pattern. Inoperation, as ball 1960 rotates within housing 1962, electric fieldstimulators couple to and decouple from the electric fields about fieldeffect sensors 1906. Detection and control circuitry associated withfield effect sensors 1906 can be adapted to determine the degree anddirection of rotation of ball 1960, as would be recognized by oneskilled in the art. In an alternate embodiment, ball 1960 can be fixedand substrate 1902 and housing 1962 can be permitted to rotate orotherwise move about housing 1962. This embodiment could be used, forexample, to detect tilt or vibration.

FIG. 44 illustrates an application specific embodiment 2000 of amechanical switch emulation according to the present invention, inparticular, a throttle for a snowmobile or personal watercraft. A fieldeffect sensor 2006 is disposed in or encapsulated within handle 2002.Electric field stimulator 2012 in the form of a conductive mass isdisposed on throttle lever 2016. As a user depresses and releasesthrottle lever 2016, electric field stimulator 2012 moves closer to andfarther from field effect sensor 2006, respectively. An analog detectionand control can be used to determine throttle position based on signalsreceived from field effect sensor 2006. In preferred embodiments,additional field effect sensors 2031, 2033, and 2035 can be disposed onhandle 2002. These additional sensors can include, for example, aredundant sensor 2031 for throttle control, a hand position sensor 2033that disables the throttle unless it detects a rider's hand on handle2002, and a water sensor 2035 that disables the throttle when immersedin water due to, for example, inversion of a watercraft.

FIGS. 45A-45B illustrate an application specific embodiment of a tirepressure sensor 2100 according to the present invention. In preferredembodiments, a compressible and preferably conductive foam substrate2104 is disposed on a surface of substrate 2102. A plurality of fieldeffect sensors 2106 are arranged in a matrix array on the other surfaceof substrate 2102. In operation, tire 2108 of, for example, anautomobile (not shown), is placed upon foam substrate 2104, therebycompressing the portion of foam substrate 2104 in contact with tire2108. The compressed portion of foam substrate 2104 couples with theelectric fields about corresponding field effect sensors 2106, thusactuating these sensors, as would be understood by one skilled in theart. A microprocessor (not shown) programmed with the weight of the loadon tire 2108 can determine the air pressure in tire 2108 based on thesignals it receives from field effect sensors 2106 corresponding to thearea of foam compressed by tire 2108. In other embodiments, foamsubstrate 2104 can be omitted, such that tire 2108 itself effects thecoupling to field effect sensors 2106.

FIG. 46 illustrates automobile passenger seat 2202 having seat portion2202 A and back portion 2202B. Seat 2202 preferably is stuffed or paddedusing compressible foam 2204 in which are embedded a plurality of fieldeffect sensors 2206A for detecting weight placed on seat 2202 and aplurality of field effect sensors 2206B for sensing the physicaldimensions of a person or item placed on seat 2202. Field effectstimulators 2212, embodied as seat support posts in the illustratedembodiment, are located in predetermined spatial relation to fieldeffect sensors 2206A.

With seat 2202 empty, field effect sensors 2206A are a predetermineddistance from field effect stimulators 2212 such that field effectsensors 2206A are not actuated. When a load, for example, a person orpackage, is placed on seat 2202, foam 2204 in seat portion 2202A iscompressed, moving field effect sensors 2206A closer to field effectstimulators 2212, causing field effect stimulators 2212 to disturb theelectric field about field effect sensors 2206A. The heavier the loadplaced on seat 2202, the greater the compression of foam 2204 in seatportion 2202B and corresponding displacement of field effect sensors2206A. An analog detection and control circuit (not shown) receivingoutput signals from field effect sensors 2206A can determine from thesesignals the displacement of field effect sensors 2206A in response tothe load placed on seat 2202. The control circuit can determine theweight of the person sitting or article placed on seat 2202 based onthis displacement data and the compressibility characteristics of foam2204.

Also, with seat 2202 empty, no stimulus couples to the electric fieldsabout field effect sensors 2206B. When a person sits or a package isplaced on seat 2202, the portions of the person or package in proximityto any of field effect sensors 2206B couple to the electric fields aboutthese sensors. An analog or digital detection and control circuitreceiving the output signals from field effect sensors 2206B candetermine the physical outline of the load (person or package) on seat2202. The control circuit could use this data in connection with theweight data derived from the signals received from field effect sensors2206A, as discussed above, to determine whether the load on seat 2202was a person or package. If the control circuit determined the load wasa package and not a person, it might deactivate the passenger airbag. Ifthe control circuit determined the load was a person and not a package,it might tailor the air bag deployment speed and force to the size andweight of the person occupying seat 2202.

While several embodiments of the present invention have been shown, itwill be obvious to those skilled in the art that numerous modificationsmay be made without departing from the spirit of the claims appendedhereto.

1. An apparatus emulating a mechanical switch, comprising: a substrate;a first field effect sensor disposed on said substrate; and a firstelectric field stimulator, wherein said first electric field stimulatoris movable along a predetermined path, said predetermined path having atleast a first point relatively near to said first field effect sensorand at least a second point relatively far from said first field effectsensor.
 2. The apparatus of claim 1 further comprising a second fieldeffect sensor disposed on said substrate, wherein said first electricfield stimulator is movable along a predetermined path, saidpredetermined path having at least a third point relatively near to saidsecond field effect sensor and at least a fourth point relatively farfrom said second field effect sensor.
 3. The apparatus of claim 1further comprising: a second field effect sensor disposed on saidsubstrate; a second electric field stimulator, wherein said secondelectric field stimulator is movable along a predetermined path, saidpredetermined path having at least a third point relatively near to saidsecond field effect sensor and at least a fourth point relatively farfrom said second field effect sensor.